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16 results

Conference Proceedings

1. VISIBLE PHOTOLUMINESCENCE FROM Si1-XGeX QUANTUM WELLS

Steiner, T.W. ; Lenchyshyn, L.C. ; Thewalt, M.L.W. ; Houghton, D.C. ; Noel, J.-P. ; Rowell, N.L. ; Sturm, J.C. ; Xiao, X.

Pub. info.:	Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A.. pp.15-20, 1993. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	298

Conference Proceedings

2. *SiGe/Si QUANTUM WELLS BY MBE: A PHOTOLUMINESCENCE STUDY

Houghton, D.C. ; Rowell, N.L. ; Noel, J.-P. ; Aers, G. ; Davies, M. ; Wang, A. ; Perovic, D.D.

Pub. info.:	Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A.. pp.3-14, 1993. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	298

Conference Proceedings

3. PHOTOLUMINESCENCE OF THIN Si1-XGeX QUANTUM WELLS

Lenchyshyn, L.C. ; Thewalt, M.L.W. ; Houghton, D.C. ; Noel, J.-P. ; Rowell, N.L. ; Sturm, J.C. ; Xiao, X.

Pub. info.:	Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A.. pp.79-84, 1993. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	298

Conference Proceedings

4. EPITAXY OF SimGen ATOMIC LAYER SUPERLATTICES

Baribeau, J.M. ; Lockwood, D.J. ; Rowell, N.L. ; Dharma-Wardana, M.W.C. ; Houghton, D.C. ; Kechang, Song

Pub. info.:	Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.95-100, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	160

Conference Proceedings

5. THE INFLUENCE OF STRAIN-MEDIATED MORPHOLOGICAL CHANGES ON THE STRUCTURAL AND OPTICAL PROPERTIES OF MBE-GROWN GeSi/Si

Perovic, D.D. ; Whitehurst, J. ; Noel, J.P. ; Rowell, N.L. ; Houghton, D.C.

Pub. info.:	Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.467-472, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	281

Conference Proceedings

6. BROAD BAND VS PHONON RESOLVED LUMINESCENCE IN Si1-X GeX/Si HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

Houghton, D.C. ; Rowell, N.L. ; Noel, J.-P. ; Dion, M.M. ; McCaffrey, J. ; Davies, M. ; Wang, A. ; Perovic, D.D.

Pub. info.:	Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.455-460, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	281

Conference Proceedings

7. RAMAN SCATTERING STUDIES OF Si1-X Ge LAYERS GROWN BY ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION

Perry, C.H. ; Lu, Feng ; Namavar, F. ; Rowell, N.L.

Pub. info.:	Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.473-478, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	281

Conference Proceedings

8. Si-BASED PHOTONIC DEVICES BY MBE

Houghton, D.C. ; Noel, J.-P. ; Rowell, N.L.

Pub. info.:	Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.. pp.299-310, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	220

Conference Proceedings

9. ELECTRICAL AND OPTICAL PROPERTIES OF ERBIUM IN MBE SILICON AND Si/Ge ALLOYS

Efeoglu, H. ; Evans, J.H. ; Langer, J.M. ; Peaker, A.R. ; Rowell, N.L. ; Noel, J.-P. ; Perovic, D.D. ; Jackman, T.E. ; Houghton, D.C.

Pub. info.:	Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A.. pp.367-372, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	220

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Conference Proceedings

10. Infrared Dielectric Properties of In1-xGaxAs Epilayers on InP(100)

Rowell, N.L. ; Yu, G. ; Lockwood, D.J. ; Poole, P.J.

Pub. info.:	Progress in compound semiconductor materials -- electronic and optoelectronic applications. pp.179-186, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	799

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