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17 results

Conference Proceedings

1. Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs

Trabelsi, M. ; Sghaier, N. ; Bluet, J.M. ; Yacoubi, N. ; Guillot, G. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1251-1254, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1363-1366, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Room Temperature Initial Oxidation of 6H- and 4H-SiC(0001) 3x3

Amy, F. ; Hwu, Y.-K. ; Brylinski, C. ; Soukiassian, P.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.215-218, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Hot-Carrier Luminescence in 4H-SiC MESFETs

Banc, C. ; Bano, E. ; Ouisse, T. ; Noblanc, O. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1371-1374, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage

Banc, C. ; Royet, A.S. ; Ouisse, T. ; Bano, E. ; Noblanc, O. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.703-706, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

6. SiC Microwave Power Devices

Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.669-674, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

7. Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy

Bluet, J. M. ; Gassoumi, M. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Guillot, G. ; Morvan, E. ; Dua, C. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.865-868, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6H-SiC Homojunction Diodes

Vacas, J. ; Lahreche, H. ; Monteiro, T. ; Gaspar, C. ; Pereira, E. ; Brylinski, C. ; Forte-Poisson, M. A. di

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1651-1654, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs

Kerlain, A. ; Morvan, E. ; Dua, C. ; Caillas, N. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1177-1180, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Gassoumi, M. ; Sghaier, N. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Bluet, J.M. ; Guillot, G. ; Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1185-1188, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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