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13 results

Conference Proceedings

1. Damage Reduction in Channeled Ion Implanted 6H-SiC

Morvan, E. ; Mestres, N. ; Campos, F. J. ; Pascual, J. ; Anders, Hallen ; Linnarsson, M. K. ; Kuznetsov, A. Yu.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.893-896, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

2. Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Sghaier, N. ; Bluet, J.M. ; Souifi, A. ; Guillot, G. ; Morvan, E. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1363-1366, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. SiC Microwave Power Devices

Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.669-674, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy

Bluet, J. M. ; Gassoumi, M. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Guillot, G. ; Morvan, E. ; Dua, C. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.865-868, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. Channeled Implants in 6H Silicon Carbide

Janson, M. S. ; Hallen, A. ; Godignon, P. ; Kuznetsov, A. Yu. ; Linnarsson, M. K. ; Morvan, E. ; Svensson, B. G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.889-892, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC

Mestres, N. ; Alsina, F. ; Campos, F. J. ; Pascual, J. ; Morvan, E. ; Godignon, P. ; Millan, J.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.663-666, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

7. Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs

Kerlain, A. ; Morvan, E. ; Dua, C. ; Caillas, N. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1177-1180, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

8. High Electrical Activation of Aluminium and Nitrogen Implanted in 6H-SiC at Room Temperature by RF Annealing

Lazar, M. ; Ottaviani, L. ; Locatelli, M.L. ; Raynaud, C. ; Planson, D. ; Morvan, E. ; Godignon, P. ; Skorupa, W. ; Chante, J.P.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.571-574, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

9. Doping of Silicon Carbide by Ion Implantation

Svensson, B.G. ; Hallen, A. ; Linnarsson, M.K. ; Kuznetsov, A.Yu. ; Janson, M.S ; Aberg, D. ; Oesterman, J. ; Persson, P.O.A. ; Hultman, L. ; Storasta, L. ; Carlsson, F.H.C. ; Bergman, J.P. ; Jagadish, C. ; Morvan, E.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.549-554, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

10.

Conference Proceedings

10. Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Gassoumi, M. ; Sghaier, N. ; Dermoul, I. ; Chekir, F. ; Maaref, H. ; Bluet, J.M. ; Guillot, G. ; Morvan, E. ; Noblanc, O. ; Dua, C. ; Brylinski, C.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1185-1188, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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