1.

Conference Proceedings
Conference Proceedings
1. Calculation of Hyperfine Constants of Defects in 4H-SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E. ; von Bardeleben, H.J. ; Monge, J.-L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.511-514,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
2.

Conference Proceedings
Conference Proceedings
2. Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold
von Bardeleben, H.J. ; Cantin, J.L. ; Baranov, P.G. ; Mokhov, E.N.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.509-512,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Phosphorus-Related Shallow and Deep Defects in 6H-SiC
Baranov, P.G. ; Ilyin, I.V. ; Mokhov, E.N. ; von Bardeleben, H.J. ; Cantin, J.L.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.503-506,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
4.

Conference Proceedings
Conference Proceedings
4. EPR Study of Electron Irradiation-Induced Defects in Semi-Insulating SiC:V
von Bardeleben, H.J. ; Cantin, J.L. ; Reshanov, S.A. ; Rastegaev, V.P.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.507-510,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
5.

Conference Proceedings
Conference Proceedings
5. EPR Studies of SiCISiO2 Interfaces in n-type 4H-and 6H- Oxidized Porous SIC
von Bardeleben, H.J. ; Cantin, J.L. ; Mynbaeva, M. ; Saddow, S.E. ; Shishkin, Y. ; Devaty, R.P. ; Choyke, W.J.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium.  pp.39-54,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-2
6.

Conference Proceedings
Conference Proceedings
6. EPR Study of the Defects in Porous Si/SiO x N y and Si0.80Ge0.20/SiGeO2
Cantin, J.L. ; Schoisswohl, M. ; von Bardeleben, H.J. ; Morazzani, V. ; Ganem, J.-J. ; Trimaille, I.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.28-45,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
7.

Conference Proceedings
Conference Proceedings
7. EPR Studies of Interface Defects in n-Type 6H-SiC/SiO2 Using Porous SiC
von Bardeleben, H.J. ; Cantin, J.L. ; Mynbaeva, M. ; Saddow, S.E.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.495-498,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. EPR Study of Carbon Vacancy-Related Defects in Electron-Irradiated 6H-SiC
Bratus', V.Ya. ; Makeeva, I.N. ; Okulov, S.M. ; Petrenko, T.L. ; Petrenko, T.T. ; von Bardeleben, H.J.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.517-520,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
9.

Conference Proceedings
Conference Proceedings
9. Low-Frequency Vibrational Spectroscopy in SiC Polytypes
Pajot, B. ; Fall, C.J. ; Cantin, J.L. ; von Bardeleben, H.J. ; Jones, R. ; Briddon, P.R. ; Gendron, F.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.349-352,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. EPR Study of Proton Implantation Induced Intrinsic Defects in 6H- and 4H-SiC
von Bardeleben, H.J. ; Cantin, J.L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.513-516,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356