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22 results

Conference Proceedings

1. Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

T. Makino ; S. Onoda ; N. Hoshino ; H. Tsuchida ; T. Ohshima

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.753-756, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy

N. Iwamoto ; S. Onoda ; N. Fujita ; T. Makino ; T. Ohshima

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.289-292, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

3. Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide

M. Deki ; T. Oka ; S. Takayoshi ; Y. Naoi ; T. Makino

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.661-664, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

4. Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring

N. Fujita ; N. Iwamoto ; S. Onoda ; T. Makino ; T. Ohshima

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.1042-1045, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

5. Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses

M. Deki ; T. Makino ; K. Kojima ; T. Tomita ; T. Ohshima

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.440-443, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area with Secondary Electron Image

K. Kinoshita ; T. Makino ; T. Yoda ; K. Dobashi ; S. Kishida

Pub. info.:	Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.. 1250 pp.227-232, 2010. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1250

Conference Proceedings

7. Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

T. Matsuda ; T. Yokoseki ; S. Mitomo ; K. Murata ; T. Makino

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.860-863, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

8. Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation

T. Makino

Pub. info.:	Zinc Oxide Materials and Devices II. 6474 2007. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6474

Conference Proceedings

9. Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-Rays by Thermal Treatments

T. Yokoseki ; H. Abe ; T. Makino ; S. Onoda ; Y. Tanaka

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.705-708, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

10.

Conference Proceedings

10. Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs

M. Deki ; T. Makino ; K. Kojima ; T. Tomita ; T. Ohshima

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.673-676, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

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