1.

Conference Proceedings
Conference Proceedings
1. Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs
Saks, N. S. ; Mani, S. S. ; Agarwal, A. K. ; Hegde, V. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.737-740,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
2.

Conference Proceedings
Conference Proceedings
2. Interface Trap Profiles near the Band Edges in 6H-SiC MOSFETs
Saks, N. S. ; Mani, S. S. ; Agarwal, A. K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1113-1116,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
3.

Conference Proceedings
Conference Proceedings
3. Investigation of Lateral RESURF, 6H-SiC MOSFETs
Saks, N. S. ; Mani, S. S. ; Hegde, V. S. ; Sanger, P. A.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1307-1310,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)