1.

Conference Proceedings
Conference Proceedings
1. AlGaN/GaN-based Metal-Oxide Semiconductor Dipole-based Hydrogen Gas Sensor
Kang, B. S. ; Ren, F. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.144-151,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
2.

Conference Proceedings
Conference Proceedings
2. Sensitivity of Pt/ZnO Schottky Diode Characteristics to Hydrogen
Kim, S. ; Kang, B. S. ; Ren, F. ; Ip, K. ; Heo, Y. W. ; Norton, D. P. ; Pearton, S. J.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.152-160,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
3.

Conference Proceedings
Conference Proceedings
3. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
Ren, F. ; Luo, B. ; Kim, J. ; Mehandru, R. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.291-304,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
4.

Conference Proceedings
Conference Proceedings
4. HVPE-Grown AlGaN/GaN HEMTs
Luo, B. ; Ren, F. ; Mastro, M. A. ; Tsvetkov, D. ; Pechnikov, A. ; Soukhoveev, V. ; Dmitriev, V. ; Baik, K. H. ; Pearton, S. J.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.45-56,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
5.

Conference Proceedings
Conference Proceedings
5. AlGaN/GaN Structures Grown by HVPE: Growth and Characterization
Mastro, M. A. ; Tsvetkov, D. V. ; Pechnikov, A. I. ; Soukhoveev, V. A. ; Gainer, G. H. ; Usikov, A. ; Dmitriev, V. ; Luo, B. ; Ren, F. ; Baik, K. H. ; Pearton, S. J.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.39-44,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
6.

Conference Proceedings
Conference Proceedings
6. Processing of Very Low Dark Current High Speed Infrared Photodetectors for Telecommunication Applications
Mehandru, R. ; Luo, B. ; Ren, F. ; Shen, P. ; Aliberti, K. ; Chu, S. N. G. ; Lothian, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.166-173,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
7.

Conference Proceedings
Conference Proceedings
7. High Current Bulk GaN Schottky Rectifier
Ip, K. ; Baik, K. H. ; Luo, B. ; Ren, F. ; Pearton, S. J. ; Park, S. S. ; Park, Y. J. ; Zhang, A. P.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.112-119,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
8.

Conference Proceedings
Conference Proceedings
8. Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers
Nigam, S. ; Kim, J. ; Luo, B. ; Ren, F. ; Chung, G. ; MacMillan, M. F. ; Williams, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.144-153,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
9.

Conference Proceedings
Conference Proceedings
9. Recent Progress in Implantation and Annealing of GaN and AlGaN
Zolper, J. C. ; Han, J. ; Deusen, S. B. Van ; Crawford, M. H. ; Biefeld, R. M. ; Jun, J. ; Suski, T. ; Baranowski, J. M. ; Pearton, S. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.979-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
10.

Conference Proceedings
Conference Proceedings
10. GaN Device Processing
Pearton, S. J. ; Ren, F. ; Zolper, J. C. ; Shul, R. J.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.961-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482