1.

Conference Proceedings
Conference Proceedings
1. AlGaN/GaN-based Metal-Oxide Semiconductor Dipole-based Hydrogen Gas Sensor
Kang, B. S. ; Ren, F. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.144-151,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
2.

Conference Proceedings
Conference Proceedings
2. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
Ren, F. ; Luo, B. ; Kim, J. ; Mehandru, R. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.291-304,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
3.

Conference Proceedings
Conference Proceedings
3. Growth of Scandium Magnesium Oxide on GaN
Onstine, A. H. ; Herrero, A. ; Gila, B. P. ; Kim, J. ; Mehandru, R. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.397-402,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
4.

Conference Proceedings
Conference Proceedings
4. The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation
Gila, B. P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J. R. ; Onstine, A. H. ; Lambers, E. ; Siebein, K. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.385-396,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
5.

Conference Proceedings
Conference Proceedings
5. IMPLANT ISOLATION MECHANISMS IN GaAs., A1GaAs, InP AND InGaAs
Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Neida, Von A. A.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.433-438,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
6.

Conference Proceedings
Conference Proceedings
6. FORMATION OF INSULATING LAYERS IN GaAs-A1GaAs HETEROSTRUCTURES
Hobson, W. S. ; Pearton, S. J. ; Abernathy, C. R. ; von Neida, A. E.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.397-402,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
7.

Conference Proceedings
Conference Proceedings
7. COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs
Ren, F. ; Fullowan, T. R. ; Lochian, J. R. ; Wisk, P.W. ; Abernathy, C. R. ; Kopf, R.F ; Emerson, A. B. ; Downey, S. W. ; Pearton, S. J.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.797-802,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
8.

Conference Proceedings
Conference Proceedings
8. ACCEPTOR DELTA-DOPING FOR SCHOTTKY BARRIER ENHANCEMENT ON n-TYPE GaAs
Pearton, S. J. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Chu, S. N. G. ; Kovalchick, J.
Pub. info.: Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.491-496,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 181
9.

Conference Proceedings
Conference Proceedings
9. GROWTH OF GaAs AND AlGaAs BY MOMBE USING PHENYLARSINE
Abernathy, C. R. ; Wisk, P. ; Pearton, S. J. ; Ren, F. ; Bohling, D. A. ; Muhr, G. T.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.57-62,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
10.

Conference Proceedings
Conference Proceedings
10. COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE
Wisk, P. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Fullowan, T. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.63-68,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
11.

Conference Proceedings
Conference Proceedings
11. AlN-based Dilute Magnetic Semiconductors
Frazier, R. ; Thaler, G. ; Gila, J. ; Stapleton, J. ; Overberg, M. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.17-23,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
12.

Conference Proceedings
Conference Proceedings
12. DRY ETCH DAMAGE IN GaAs P-N JUNCTIONS
Pearton, S. J. ; Abernathy, C. R.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.301-306,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
13.

Conference Proceedings
Conference Proceedings
13. RADIATION TESTING OF AlInAs/InGaAs AND GaAs/AlGaAs HBTs
Witmer, S. B. ; Mittleman, S. ; Lehy, D. ; Ren, F. ; Fullowan, T. R. ; Kopf, R. F. ; Abernathy, C. R. ; Pearton, S. J. ; Humphrey, D. A. ; Monthgomery, R. K. ; Smith, P. R. ; Kreskovsky, J. P. ; Grubin, H. L.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.523-530,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
14.

Conference Proceedings
Conference Proceedings
14. *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES
Pearton, S. J. ; Katz, A. ; Feingold A ; Ren, F. ; Fullowan, T. R. ; Lothian, J. R ; Abernathy, C. R.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.19-30,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
15.

Conference Proceedings
Conference Proceedings
15. Photoluminescence enhancement and morphological properties of carbon co-doped GaN: Er
Overberg. M. E. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Zavada, J. M.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.62.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
16.

Conference Proceedings
Conference Proceedings
16. Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing
Maeda, T. ; Lee, J. W. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Constantine, C. ; Shul, R. J.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.209-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
17.

Conference Proceedings
Conference Proceedings
17. Metal Contact on Nitride-Based Materials
Ren, F. ; Abernathy, C. R. ; Shurman, M. ; Hong, M. ; Pearton, S. J. ; Lothian, J. R.
Pub. info.: Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.451-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 514
18.

Conference Proceedings
Conference Proceedings
18. ION BEAM PROCESSING OF InGaAsP
Pearton, S. J. ; Abernathy, C. R. ; Wisk, P. W. ; Ren, F.
Pub. info.: Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.319-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 316
19.

Conference Proceedings
Conference Proceedings
19. Low temperature SiNx as a sacrificial layer in novel device fabrication
Lothian, J. R. ; Ren, F. ; Pearton, S. J. ; Abernathy, C. R. ; Tseng, B. ; Hobson, W. S.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.161-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
20.

Conference Proceedings
Conference Proceedings
20. EFFECTS OF ION-IRRADIATION AND HYDROGENATION ON THE DOPING OF InGaAlN ALLOYS
Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.261-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
21.

Conference Proceedings
Conference Proceedings
21. OPTICAL EMISSION END-POINT DETECTION FOR VIA HOLE ETCHING IN InP AND GaAs POWER DEVICE STRUCTURES
Pearton, S. J. ; Ren, F. ; Abernathy, C. R. ; Constantine, C.
Pub. info.: Diagnostic techniques for semiconductor materials processing : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.341-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 324
22.

Conference Proceedings
Conference Proceedings
22. ORIENTED CARBON PAIR DEFECTS STABILIZED BY HYDROGEN IN AS-GROWN GaAs EPITAXIAL LAYERS
Cheng, Y. M. ; Stavola, M. ; Abernathy, C. R. ; Pearton, S. J.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.273-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
23.

Conference Proceedings
Conference Proceedings
23. Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy
MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Donovan, S. M. ; Hommerich, U. ; Thaik, M. ; Wu, X. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.123-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
24.

Conference Proceedings
Conference Proceedings
24. Substrate Effects on the Growth of InN
Donovan, S. M. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Holloway, P. H. ; Ren, F. ; Zavada, J. M. ; Chai, B.
Pub. info.: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.161-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 468
25.

Conference Proceedings
Conference Proceedings
25. Selective Etching of Wide-Bandgap Nitrides
Shul, R. J. ; Willison, C. G. ; Bridges, M. M. ; Han, J. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Donovan, S. M.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.155-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
26.

Conference Proceedings
Conference Proceedings
26. Hydrogen Passivation of Er-Doped AlN
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Hommerich, U. ; Zavada, J. M. ; Ren, F. ; Wilson, R. G. ; Schwartz, R. N.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.169-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
27.

Conference Proceedings
Conference Proceedings
27. In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon
Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; Vawter, G. A. ; Shul, R. J. ; Bridges, M. M. ; Willison, C. G.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.191-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
28.

Conference Proceedings
Conference Proceedings
28. Chemical Etching of AlN and InAlN in KOH Solutions
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Pearton, S. J. ; Abernathy, C. R. ; Zolper, J. C. ; Shul, R. J. ; Ren, F.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1017-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
29.

Conference Proceedings
Conference Proceedings
29. Comparison of ICI and Ibr for Dry Etching of III-Nitrides
Vartuli, C. B. ; Lee, J. W. ; MacKenzie, J. D. ; Pearton, S. J. ; Abernathy, C. R. ; Shul, R. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1023-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
30.

Conference Proceedings
Conference Proceedings
30. THERMAL STABILITY OF Ti/Pt/Au NON-ALLOYED OHMIC CONTACTS ON InN
Ren, F. ; Abernathy, C. R. ; Pearton, S. J. ; Wisk, P. W.
Pub. info.: Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A..  pp.421-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 337
31.

Conference Proceedings
Conference Proceedings
31. Properties of H, O and C in GaN
Pearton, S. J. ; Abernathy, C. R. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J. ; Zolper, J. C.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.347-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
32.

Conference Proceedings
Conference Proceedings
32. Damage Introduction in InGaP and AlGaAs by Electron Cyclotron Resonance Ar Plasmas
Lee, J. W. ; Pearton, S. J. ; Stradtmann, R. R. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.239-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
33.

Conference Proceedings
Conference Proceedings
33. Dry Etching of InGaP and AlInP in CH4/H2/Ar
Lee, J. W. ; Pearton, S. J. ; Santana, C. J. ; Lambers, E. S. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.315-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
34.

Conference Proceedings
Conference Proceedings
34. Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN
Pearton, S. J. ; Vartuli, C. B. ; Lee, J. W. ; Donovan, S. M. ; MacKenzie, J. D. ; Abernathy, C. R. ; Shul, R. J. ; McLane, G. F. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.309-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
35.

Conference Proceedings
Conference Proceedings
35. Cl2-Based ECR Etching of InGaP, AlInP and AlGaP
Hong, J. ; Lee, J. W. ; Pearton, S. J. ; Santana, C. ; Abernathy, C. R. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.303-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
36.

Conference Proceedings
Conference Proceedings
36. Patterning of LiGaO2 and LiAlO2 by Wet and Dry Etching
Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; Wilson, R. G. ; Chai, B. L. ; Ren, F. ; Zavada, J. M.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1041-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
37.

Conference Proceedings
Conference Proceedings
37. InN-Based Ohmic Contacts to AlInN
Donovan, S. M. ; Ren, F. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Jones, K.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.1067-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
38.

Conference Proceedings
Conference Proceedings
38. Chlorine-Based Plasma Etching of GaN
Shul, R. J. ; Briggs, R. D. ; Pearton, S. J. ; Vartuli, C. B. ; Abernathy, C. R. ; Lee, J. W. ; Constantine, C. ; Barratt, C.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.969-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
39.

Conference Proceedings
Conference Proceedings
39. Photoluminescence, Reflectance, and Magnetospectroscopy of Shallow Excitons in GaN
Skromme, B. J. ; Zhao, H. ; Goldenberg, B. ; Kong, H. S. ; Leonard, M. T. ; Bulman, G. E. ; Abernathy, C. R. ; Pearton, S. J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.713-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
40.

Conference Proceedings
Conference Proceedings
40. GROWTH AND DOPING OF AlAs BY MOMBE
Abernathy, C. R. ; Pearton, S. J. ; Wisk, P. W. ; Hobson, W. S. ; Ren, F.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.187-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
41.

Conference Proceedings
Conference Proceedings
41. NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS
Pearton, S. J. ; Chakrabarti, U. K. ; Ren, F. ; Abernathy, C. R. ; Katz, A. ; Hobson, W. S. ; Constantine, C.
Pub. info.: Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.399-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 334
42.

Conference Proceedings
Conference Proceedings
42. DIFFUSION OF IMPLANTED DOPANTS AND ISOLATION SPECIES IN III-V NITRIDES
Pearton, S. J. ; Abernathy, C. R. ; Vartuli, C. B. ; Wilson, R. G. ; Zavada, J. M.
Pub. info.: Beam-solid interactions for materials synthesis and characterization : symposium held November 28-December 2, 1994, Boston, Massachusetts, U.S.A..  pp.159-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 354
43.

Conference Proceedings
Conference Proceedings
43. COMPARISON OF MULTIPOLAR RESONANT-CAVITY AND MAGNETIC MIRROR MICROWAVE ECR SOURCES FOR DRY ETCHING OF III-V SEMICONDUCTORS
Pearton, S. J. ; Abernathy, C. R. ; Ren, F.
Pub. info.: Microwave processing of materials IV : symposium held April 4-8, 1994, San Francisco, California, U.S.A..  pp.441-,  1994.  Pittsburgh,, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 347
44.

Conference Proceedings
Conference Proceedings
44. AIN GROWN BY METALORGANIC MOLECULAR BEAM EPITAXY
Mackenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G.
Pub. info.: Chemical vapor deposition of refractory metals and ceramics III : symposium held November 28-30, 1994, Boston, Massachusetts, U.S.A..  pp.213-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 363
45.

Conference Proceedings
Conference Proceedings
45. Rapid Thermal Processing of III-Nitrides
Hong, J. ; Lee, J. W. ; Vartuli, C. B. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Crockett, R. V. ; Pearton, S. J. ; Zolper, J. C. ; Ren. F.
Pub. info.: Rapid thermal and integrated processing VI : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.401-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 470
46.

Conference Proceedings
Conference Proceedings
46. Hydrogen Diffusion and Passivation in InGaAlN Alloys
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Vartuli, C. B. ; Wilson, R. G. ; Zavada, J. M. ; Shul, R. J.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.497-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
47.

Conference Proceedings
Conference Proceedings
47. High Resistivity InAlN by Nitrogen or Oxygen Implantation
Zolper, J. C. ; Pearton, S. J. ; Abernathy, C. R. ; Vartuli, C. B.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.485-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
48.

Conference Proceedings
Conference Proceedings
48. Fabrication of Novel III-N and III-V Modulator Structures by ECR Plasma Etching
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Mileham, J. R. ; Shul, R. J. ; Kilcoyne, S. P. ; Hagerott-Crawford, M. ; Ren, F. ; Hobson, W. S. ; Zavada, J. M.
Pub. info.: Surface/interface and stress effects in electronic material nanostructures : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.115-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 405
49.

Conference Proceedings
Conference Proceedings
49. Characterization of Er-Doped III-V Nitride Epilayers Prepared by MOMBE
Zavada, J. M. ; Wilson, R. G. ; Schwartz, R. N. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Wu, X. ; Hommerich, U.
Pub. info.: Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.193-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 422
50.

Conference Proceedings
Conference Proceedings
50. Carbon Implantation in Alx Ga1-x As
Pearton, S. J. ; Abernathy, C. R.
Pub. info.: Ion-solid interactions for materials modification and processing : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.789-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 396