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14 results

Conference Proceedings

1. Processing of Very Low Dark Current High Speed Infrared Photodetectors for Telecommunication Applications

Mehandru, R. ; Luo, B. ; Ren, F. ; Shen, P. ; Aliberti, K. ; Chu, S. N. G. ; Lothian, J. R. ; Pearton, S. J.

Pub. info.:	State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia. pp.166-173, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-14

Conference Proceedings

2. WET AND DRY ETCHING OF InGaP

Lothian, J. R. ; Kuo, J. M. ; Pearton, S. J. ; Ren, F.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.307-314, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES

Pearton, S. J. ; Ren, F. ; Lothian, J. R. ; Fullowan, T. R. ; Kopf, R. F. ; Chakrabati, U. K. ; Hui, S. P. ; Emerson, A. B. ; Pei, S. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.293-300, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

4. Metal Contact on Nitride-Based Materials

Ren, F. ; Abernathy, C. R. ; Shurman, M. ; Hong, M. ; Pearton, S. J. ; Lothian, J. R.

Pub. info.:	Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A.. pp.451-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	514

Conference Proceedings

5. Formation of long wavelength InP laser MESAS

Ren, F. ; Pearton, S. J. ; Tseng, B. ; Lothian, J. R. ; Constantine, C.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.169-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

Conference Proceedings

6. Low temperature SiNx as a sacrificial layer in novel device fabrication

Lothian, J. R. ; Ren, F. ; Pearton, S. J. ; Abernathy, C. R. ; Tseng, B. ; Hobson, W. S.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.161-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

Conference Proceedings

7. Small diameter dry etched via holes in GaAs

Pearton, S. J. ; Ren, F. ; Katz, A. ; Tseng, B. ; Lothian, J. R. ; Fullowan, T. R.

Pub. info.:	III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.. pp.153-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	300

Conference Proceedings

8. Passivation of Carbon Doping in InGaAs During ECR-CVD of SiNx

Ren, F. ; Hamm, R. A. ; Wilson, R. G. ; Pearton, S. J. ; Lothian, J. R.

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.321-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

Conference Proceedings

9. Plasma Damage Effects in InAlN Field-Effect Transistors

Ren, F. ; Lothian, J. R. ; Chen, Y. K. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Vartuli, C. B. ; Lee, J. W. ; Pearton, S. J. ; Wilson, R. G.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.385-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

10.

Conference Proceedings

10. HIGH DENSITY MAGNETICALLY CONFINED DRY ETCHING OF METALLIZATION AND DIELECTRICS IN GaAs DEVICE TECHNOLOGY

Pearton, S. J. ; Abernathy, C. R. ; Ren, F. ; Lothian, J. R. ; Kopf, R. P. ; Katz, A.

Pub. info.:	Advanced metallization for devices and circuits--science, technology, and manufacturability : symposium held April 4-8, 1994, San Francisco, California, U.S.A.. pp.749-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	337

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