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29 results

Conference Proceedings

1. Ion Implantation Induced Deep Defects in n-Type 4H-Silicon Carbide

Evwaraye, A.O. ; Smith, S.R. ; Mitchel, W.C. ; Capano, M.A.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.175-180, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

2. The Effect of Surface Finish on the Dislocation Density in Sublimation Grown SiC Layers

Sanchez, E. K. ; Liu, J. ; Skowronski, M. ; Vetter, W. M. ; Dudley, M. ; Bertke, R. ; Mitchel, W.C.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

3. The Effect of Annealing on High-Resistivity and Semi-Insulating 4H-SiC

Smith, S.R. ; Evwaraye, A.O. ; Mitchel, W.C.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.277-282, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

4. Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC-Comparison Studies

Evwaraye, A.O. ; Smith, S.R. ; Mitchel, W.C. ; Farlow, G.C. ; Capano, M.A.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.223-228, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

5. Growth of carbon nanotubes by sublimation of silicon carbide substrates (Invited Paper)

Mitchel, W.C. ; Boeckl, J. ; Tomlin, D. ; Lu, W. ; Rigueur, J. ; Reynolds, J.

Pub. info.:	Quantum Sensing and Nanophotonic Devices II. pp.77-83, 2005. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5732

Conference Proceedings

6. Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Elhamri, S. ; Saxler, A. ; Cull, D. ; Mitchel, W.C. ; Elsass, C.R. ; Smorchkova, I. P. ; Heying, B. ; Poblenz, C. ; Fini, P. ; Keller, S. ; Petroff, P. M. ; DenBaars, S.P. ; Mishra, U. K. ; Speci, J. S.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

7. High Electron Mobility in Free-Standing GaN Substrates

Saxler, A. ; Look, D. C. ; Elhamri, S. ; Sizelove, J. ; Cull, D. ; Mitchel, W.C. ; Callahan, M. ; Bliss, D. ; Bouthillette, L. ; Wang, Sheng-Qi ; Sung, C. M. ; Park, S. S. ; Lee, K.Y.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

8. Resistivity Mapping of Semi-Insulating 6H-SiC Wafers

Roth, M.D. ; Heydemann, V.D. ; Mitchel, W.C. ; Yushin, N.K. ; Sharma, M. ; Wang, S. ; Balkas, C.M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.135-138, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Resistivity Mapping of Semi-Insulating 6H-SiC Wafers

Roth, M.D. ; Heydemann, V.D. ; Mitchel, W.C. ; Yushin, N.K. ; Sharma, M. ; Wang, S. ; Balkas, C.M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.135-138, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC

Kalabukhova, E.N. ; Lukin, S.N. ; Mitchel, W.C.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.499-502, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

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