1.

Conference Proceedings
Conference Proceedings
1. Defect and Composition Analysis of as-deposited and Nitrided (100)Si/SiO2/Hf1-xSiO2 Stacks byElectron Paramagnectic Resonance and Ion Beam Analysis
von Bardeleben, H. J. ; Cantin, J. L. ; Ganem, J. J. ; Trimaille, I. ; Gusev, E. P.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.249-263,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. *INTRINSIC DEFECTS IN GaAs - THE CASE OF EL2
von Bardeleben, H. J. ; Stievenard, D.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.351-362,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
3.

Conference Proceedings
Conference Proceedings
3. POINT DEFECTS, DISLOCATIONS IN GaAs AND MATERIAL HOMOGENEITY
Bourgoin, J. C. ; von Bardeleben, H. J. ; Lim, H. ; Stievenard, D.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.411-414,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104