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18 results

Conference Proceedings

1. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS

Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.1095-1112, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(2)

Conference Proceedings

2. TURBULENT MELT CONVECTION AND ITS IMPLICATION ON LARGE DIAMETER SILICON CZOCHRALSKI CRYSTAL GROWTH

Seidl, A. ; Mueller, G. ; Dornberger, E. ; Tomzig, E. ; Reyer, B. ; von Ammon, W.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.417-428, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

Conference Proceedings

3. SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL

Dornberger, E. ; Esfandyari, J. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; Dupret, F. ; von Ammon, W.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.490-502, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

Conference Proceedings

4. Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing

Kissinger, G. ; Grabolla, T. ; Morgenstern, G. ; Richter, H. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; von Ammon, W.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.74-87, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

5. Determination of Intrinsic Point Defect Properties in Silicon by Analyzing OSF-Ring Dynamics and Void Formation

Dornberger, E. ; Sinno, T. ; Esfandyari, J. ; Vanhellemont, J. ; Brown, R.A. ; von Ammon, W.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.170-187, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

Conference Proceedings

6. D-defects and metal-related flow patterns

Kissinger, G. ; Morgenstern, G. ; Richter, H. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; von Ammon, W. ; Wagner, P.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.32-39, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

7. Simulation of grown-in voids in Czochralski silicon crystals

Dornberger, E. ; Esfandyari, J. ; Graef, D. ; Vanhellemont, J. ; Lambert, U. ; Dupret, F. ; von Ammon, W.

Pub. info.:	Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II. pp.40-49, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-22

Conference Proceedings

8. INTRODUCTORY REMARKS - SILICON MATERIALS: GENERIC ISSUES

von Ammon, W. ; Shigematsu, T.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.209-211, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

9. ARGON-ANNEALED 300mm WAFERS COMPLEMENTING PP- EPITAXIAL LAYERS

Muller, T. ; Siebert, W. ; Messmann, K. ; Wablich, R. ; Krottenthaler, P. ; Hoelzl, R. ; Ikari, A. ; von Ammon, W.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.194-208, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

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Conference Proceedings

10. DEFECTS IN SILICON CRYSTALS AND THEIR IMPACT ON TRENCH CAPACITOR DRAM DEVICE CHARACTERISTICS

Dornberger, E. ; Temmler, D. ; von Ammon, W.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.227-240, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

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