A study of V3+ and the vanadium acceptor level in semi-insulating 6H-SiC
- Author(s):
- Publication title:
- Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 864
- Pub. Year:
- 2005
- Page(from):
- 15
- Page(to):
- 20
- Pages:
- 6
- Pub. info.:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998179 [1558998179]
- Language:
- English
- Call no.:
- M23500/864
- Type:
- Conference Proceedings
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