1.

Conference Proceedings
Conference Proceedings
1. Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices
Lee, H.S. ; Domeij, M. ; Zetterling, C.M. ; Ostling, M. ; Lu, J.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.887-890,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Domeij, M. ; Lee, H.S. ; Zetterling, C.M. ; Ostling, M. ; Schoner, A.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1425-1428,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. High Frequency Measurements and Simulations of SiC MESFETs up to 250°C
Liu, W. ; Zetterling, C.M. ; Oestling, M. ; Eriksson, J. ; Rorsman, N. ; Zirath, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1209-1212,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Extrinsic Base Design of SiC Bipolar Transistors
Danielsson, E. ; Domeij, M. ; Zetterling, C.M. ; Oestling, M. ; Schoner, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1117-1120,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
Lee, H.S. ; Koo, S.M. ; Zetterling, C.M. ; Danielsson, E. ; Domeij, M. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1437-1440,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. SiC JMOSFETs for High-Temperature Stable Circuit Operation
Koo, S.M. ; Zetterling, C.M. ; Lee, H.S. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1445-1450,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460