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Conference Proceedings

1. ICP Etching of SiC

Wang, J. J. ; Lambers, E. S. ; Pearton, S. J. ; Ostling, M. ; Zetterling, C-M. ; Grow, J. M. ; Ren, F.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.177-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

2. High-Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC

Zetterling, C-M. ; Ostling, M. ; Norin, L. ; Jansson, U.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.125-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

3. Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum anealing process

Huang, J. ; Wang, L. ; Wen, J. ; Wang, Y. ; Lin, C. ; Zetterling, C-M. ; Ostling, M.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.207-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

4. Low Bias Dry Etching of SiC and SiCN in ICP NF3 Discharges

Wang, J. J. ; Cho, Hyun ; Lambers, E. S. ; Pearton, S. J. ; Ostling, M. ; Zetterling, C-M. ; Grow, J. M. ; Ren, F. ; Shul, R. J. ; Han, J.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.507-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512