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15 results

Conference Proceedings

1. Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ･cm2

Tanaka, Y. ; Yano, K. ; Okamoto, M. ; Takatsuka, A. ; Fukuda, K. ; Kasuga, M. ; Arai, K. ; Yatsuo, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1219-1222, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Lifetime Control of the Minority Carrier in PiN Diodes by He+ Ion Implantation

Tanaka, Y. ; Kojima, K. ; Takao, K. ; Okamoto, M. ; Kawasaki, M. ; Takatsuka, A. ; Yatsuo, T. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.985-988, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

3. Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET

Harada, S. ; Okamoto, M. ; Yatsuo, T. ; Fukuda, K. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.813-816, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

4. 4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET

Harada, S. ; Kato, M. ; Okamoto, M. ; Yatsuo, T. ; Fukuda, K. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1281-1284, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Fabrication of 4H-SiC DIMOSFETs by High-Tempemture (>1400oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace

Kosugi, R. ; Suzuki, K. ; Takao, K. ; Hayashi, Y. ; Yatsuo, T. ; Fukuda, K. ; Ohashi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1309-1312, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility

Okamoto, M. ; Tanaka, M. ; Yatsuo, T. ; Fukuda, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1301-1304, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. 4H-SiC Lateral RESURF MOSFETs on Carbon-Face Substrates

Okamoto, M. ; Suzuki, S. ; Kato, M. ; Yatsuo, T. ; Fukuda, K.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.805-808, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. 4H-SiC Lateral RESURF MOSFET with a Buried Channel Structure

Suzuki, S. ; Harada, S. ; Yatsuo, T. ; Kosugi, R. ; Senzaki, J. ; Fukuda, K.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.753-756, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

9. Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

Kosugi, R. ; Kiritani, N. ; Suzuki, K. ; Yatsuo, T. ; Adachi, K. ; Fukuda, K.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1397-1400, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Harada, S. ; Okamoto, M. ; Yatsuo, T. ; Adachi, K. ; Suzuki, K. ; Suzuki, S. ; Fukuda, K. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.1421-1424, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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