1.

Conference Proceedings
Conference Proceedings
1. MOCVD Growth of AIN/GaN DBR Structure Under Various Ambient Conditions
Yao, H. H. ; Lin, C. F. ; Wang, S. C.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.63-68,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
2.

Conference Proceedings
Conference Proceedings
2. Effects of growth interruption time on InGaN/GaN quantum dots size grown by metal organic chemical vapor deposition (Invited Paper) [6121-01]
Yao, H. H. ; Huang, G.S. ; Lu, T.C. ; Chen, C.Y. ; Liang, W.D. ; National Chiao-Tung Univ. (Taiwan) ; National Chiao-Tung Univ. (Taiwan)
Pub. info.: Gallium Nitride Materials and Devices.  pp.612102-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6121