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37 results

Conference Proceedings

1. High Purity SiC EpitaxiaI Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources

Hatayama, T. ; Yano, H. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.203-206, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. 3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

Yanagisawa, Y. ; Hatayama, T. ; Yano, H. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.423-426, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Reduction of Fluoride Species and Surface Roughness by H2 Gas Addition in SiC Dry Etching

Mikami, H. ; Horie, Y. ; Hatayama, T. ; Yano, H. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.757-760, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

4. First detection of OH emission from meteor and afterglow: Search for organics in cometary meteoroids

Abe, S. ; Yano, H.

Pub. info.:	Proceedings of asteroids, comets, meteors : ACM 2002 : 29 July -2 August 2002, Technical University Berlin, Berlin, Germany. pp.213-216, 2002. Noordwijk. ESA Publications Division
Title of ser.:	ESA SP
Ser. no.:	500

Conference Proceedings

5. Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide

Yano, H. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.971-974, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls

Nakao, H. ; Mikami, H. ; Yano, H. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1293-1296, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. 4H-SiC MOSFETs on (03-38) Face

Hirao, T. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Shiomi, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1065-1068, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment

Maeyama, Y. ; Yano, H. ; Hatayama, T. ; Uraoka, Y. ; Fuyuki, T. ; Shirafuji, T.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.997-1000, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. 4H-SiC MOSFETs on (03-38) Face

Hirao, T. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Shiomi, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1065-1068, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Photo-enhanced Electrochemical Mechanical Polishing for Cu Damascene

Yano, H. ; Matsui, Y. ; Minamihaba, G. ; Tateyama, Y.

Pub. info.:	Chemical Mechanical Planarization : proceedings of the International Symposium. pp.71-78, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-1

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