Blank Cover Image

AllnGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE

Author(s):
Xu,Z.-T. ( Institute of Semiconductors,Beijing Polytechnic Univ.and Beijing Optoelectronics Technology Lab. )
Yang,G.-W.
Xu,J.-Y.
Zhang,J.-M.
Chen,C.-H.
Chen,L.-H.
Shen,G.-D.
2 more
Publication title:
Semiconductor Lasers II
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2886
Pub. Year:
1996
Page(from):
292
Page(to):
296
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819422873 [0819422878]
Language:
English
Call no.:
P63600/2886
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metal-organic chemical vapor deposition (Invited Paper)

Yin,T., Lian,P., Xu,Z., Chen,C., Zhao,H., Zou,D., Chen,J., Gao,G., Du,J., Tao,C., Shen,G., Lu,H., Zheng,L., Chen,L.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings LASER QUALITY AlGaAs-GaAs QUANTUM WELLS GROWN ON LOW TEMPERATURE GaAs

Hwang, Y., Zhang, D., Zhang, T., Mytych, M., Kolbas, R.M.

Materials Research Society
2 Conference Proceedings Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AIGaAs

Yang,G., Xu,Z., Xu,J., Ma,X., Zhang,J., Chen,L.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells

Gai, H., Deng, J., Li, J., Shen, G., Chen, J.

Trans Tech Publications
3 Conference Proceedings EPITAXIAL CoSi2/POROUS-SI STRAINED LAYER STRUCTURES GROWN BY MBE

Kao, Y. C., Jamieson, D., Bai, G.,, Nieh, C. W., Lin, T. L., Wu, B. J., Chen, H. Y., Wang, K. L.

Materials Research Society
9 Conference Proceedings The Confinement Profile of As-Grown MOVPE AlGaAs/GaAs Quantum Well Structures

Choy, W. C. H., Hughes, P. J., Weiss, B. L.

MRS - Materials Research Society
4 Conference Proceedings High-performance 1.3-and 1.55-ｦﾌm InGaAsP/InP strained-layer quantum well lasers grown by LP-MOCVD

Ma,X., Wang,S., Xiong,F., Guo,L., Wang,Z., Wang,L., Zhang,X., Sun,G., Xia,C., Zhu,T., Yang,Y., Zhang,H., He,G., Yao,S., …

SPIE-The International Society for Optical Engineering
10 Conference Proceedings MODULATOR STRUCTURE USING In(As,P)/InP STRAINED MULTIPLE QUANTUM WELLS GROWN BY GAS-SOURCE MBE

Hou, H. Q., Chin, T. P., Liang, B. W., Tu, C. W.

Materials Research Society
5 Conference Proceedings Strained p-type InGaAs/AlGaAs multipe quantum well infrared photodetectors

Zhang, D.H., Sun, L., Shi, W., Yoon, S.F., Li, N., Yuan, Z., Chu, J.H.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings High-resolution X-ray diffraction analysis of p-type strained InGaAs/AlGaAs multiple quantum well structures

Shi, W., Zhang, D. H., Osotchan, T., Zhang, P. H., Yoon, S. F., Swaminathan, S.

MRS-Materials Research Society
6 Conference Proceedings Characterization of GalnAsP/InP multiple quantum wells grown by solid source MBE for long- wavelength infrared detection

Zhang, D.H., Sun, L., Yoon, S.F., Kam, C.H., Fan, W.J., Mei, T.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Photoluminescence dynamics and structural investigation of InGaN/GaN multiple quantum well light emitting diodes grown by metalorganic chemical vapor deposition

Z. S. Lee, Z. C. Feng, A. G. Li, H. L. Tsai, J. R. Yang, Y. F. Chen, N. Li, I. T. Ferguson, W. Lu

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12