1.

Conference Proceedings
Conference Proceedings
1. Electronic Properties of GaAs Doped with Copper
Yang,B.H. ; Gislason,H.P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.713-718,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Characterization of Defects in Li-Diffused n-type GaAs
Yang,B.H. ; Egilsson,T. ; Kritjansson,S. ; Peiursson,J. ; Gislason,H.P.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.2  pp.839-843,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. Bound Exciton Spectra in Semi-Insulating GaAs
Gislason,H.P. ; Yang,B.H.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.201-206,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
4.

Conference Proceedings
Conference Proceedings
4. Oscillations in PLE Spectra of Li Passivated GaA,Related to Interstitial Li Donors
Petursson,J. ; Ingvarsson,S.P. ; Yang,B.H. ; Gislason,H.P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.207-212,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. Reactivation Kinetics of Lithium-Passivated Acceptors in GaAs
Leosson,K. ; Yang,B.H. ; Gislason,H.P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1395-1400,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
6.

Conference Proceedings
Conference Proceedings
6. High-quantum-efficiency InAs/GaInSb/AISb interband cascade lasers (Invited Paper)
Yang,B.H. ; Yang,R.Q. ; Zhang,D. ; Lin,C.-H. ; Pei,S.S.
Pub. info.: Semiconductor Lasers III.  pp.324-332,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3547
7.

Conference Proceedings
Conference Proceedings
7. High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers (Invited Paper)
Pei,S.S. ; Lin,C.-H. ; Yang,B.H. ; Le,H.Q. ; Yang,R.Q. ; Zhang,D. ; Murry,S.J. ; Zheng,J.
Pub. info.: Optoelectronic Materials and Devices.  pp.273-283,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3419
8.

Conference Proceedings
Conference Proceedings
8. Type-II quantum cascade lasers (Invited Paper)
Yang,R.Q. ; Lin,C.-H. ; Yang,B.H. ; Zhang,D. ; Murry,S.J. ; Pei,S.S. ; Bewley,W.W. ; Olafsen,L.J. ; Aifer,E.H. ; Felix,C.L. ; Vurgaftman,I. ; Meyer,J.R.
Pub. info.: In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II.  pp.308-317,  1998.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3284