1.

Conference Proceedings
Conference Proceedings
1. Electrical Activation of B Implant in 6H-SiC
Valcheva,E. ; Paskova,T. ; Ivanov,I.S. ; Yakimova,R. ; Wahab,Q. ; Savage,S. ; Nordell,N. ; Hamis,C.I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.705-708,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering
Paskova,T. ; Valcheva,E. ; Ivanov,I.G. ; Yakimova,R. ; Savage,S. ; Nordell,N. ; Harris,C.I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.741-744,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Nishino,S. ; Yakimova,R. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.147-150,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation
Tuominen,M. ; Yakimova,R. ; Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Syvajarvi,M. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.151-154,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. A Coupled Finite Element Model for the Sublimation Growth of SiC
Raback,P. ; Nieminen,R. ; Yakimova,R. ; Tuominen,M. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.65-68,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
6.

Conference Proceedings
Conference Proceedings
6. XPS Study of Ni Layers Deposited on 6H-SiC
Marinova,Ts. ; Krastev,V. ; Hallin,C. ; Yakimova,R. ; Janzen,E.
Pub. info.: Intergranular and interphase boundaries in materials : iib95 : proceedings of the 7th International Conference on Intergranular and Interphase Boundaries in Materials held in Lisboa, Portugal, June 26-29, 1995.  pp.293-296,  1996.  Zurich-Uetikon, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 207-209
7.

Conference Proceedings
Conference Proceedings
7. Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
Yakimova,R. ; Syvajarvi,M. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.159-162,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
8.

Conference Proceedings
Conference Proceedings
8. High-Voltage(>2.5kV)4H-SiC Schottky Reetifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
Kimoto,T. ; Wahab,Q. ; Ellison,A. ; Forsberg,U. ; Tuominen,M. ; Yakimova,R. ; Henry,A. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.921-924,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
9.

Conference Proceedings
Conference Proceedings
9. High Growth Rate of α-SiC by Sublimation Epitaxy
Syvajarvi,M. ; Yakimova,R. ; MacMillan,M.F. ; Tuominen,M. ; Kakanakova-Georgieva,A. ; Hemmingsson,C.G. ; Ivanov,I.G. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.143-146,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268