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28 results

Conference Proceedings

1. Room-Temperature Sputter-Deposited Gate SiO₂ Films for High Quality Poly-Si TFTs

T. Serikawa ; T. Miyamoto ; H. Ueno ; Y. Sugawara ; Y. Uraoka

Pub. info.:	Thin Film Transistor Technology 8. pp.107-112, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(8)

Conference Proceedings

2. Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing and Its Application to Low Temperature poly-Si Thin Film Transistors

Y. Sugawara ; Y. Uraoka ; H. Yano ; T. Hatayama ; T. Fuyuki

Pub. info.:	Thin Film Transistor Technology 8. pp.173-178, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(8)

Conference Proceedings

3. Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000°C

Y.Z. Yao ; Y. Ishikawa ; K. Sato ; Y. Sugawara ; K. Danno

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.829-832, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

4. Nanoporous Copper Dealloyed from a Nanocrystallized Ticu Alloy

Z.H. Dan ; F.X. Qin ; Y. Sugawara ; I. Muto ; N. Hara

Pub. info.:	Advanced Materials Science and Technology : Selected, peer reviewed papers from the 8th International Forum on Advanced Materials Science and Technology (IFAMST 8) August 1-4, 2012, Fukuoka Institute of Technology, Japan. pp.72-75, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	750

Conference Proceedings

5. Electrochemical Stability and Oxidation Mechanism of Carbon Support for PEM Fuel Cell

A.P. Yadav ; Y. Sugawara ; A. Nishikata ; T. Tsuru

Pub. info.:	Proton exchange membrane fuel cells 8. pp.2093-2099, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(2)

Conference Proceedings

6. Removal of Mechanical-Polishing-Induced Surface Damages on 4H-SiC by Chemical Etching and its Effect on Subsequent Epitaxial Growth

Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.541-544, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

7. Dislocations in SiC Revealed by NaOH Vapor Etching and a Comparison with X-Ray Topography Taken with Various g-Vectors

Y.Z. Yao ; Y. Ishikawa ; Y. Sugawara ; K. Sato ; K. Danno

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.389-392, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

8. Characterization of Dislocation Structures in Hexagonal SiC by Transmission Electron Microscopy

Y. Sugawara ; Y. Yao ; Y. Ishikawa ; K. Danno ; H. Suzuki

Pub. info.:	Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan. pp.11-14, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	725

Conference Proceedings

9. Variation of Etch Pit Size by Screw Dislocation Tilt in 4H-SiC Wafer

Y. Ishikawa ; Y.Z. Yao ; Y. Sugawara ; K. Danno ; H. Suzuki

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.367-370, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

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Conference Proceedings

10. Novel SiC Zener Diodes with High Operating Temperature of 300°C and High Power Density of 40 kW/cm2

R. Ishii ; K. Nakayama ; H. Tsuchida ; Y. Sugawara

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.1015-1018, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

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Author: Y. Sugawara