1.

Conference Proceedings
Conference Proceedings
1. Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions
Y. Nagahisa ; E. Tokumitsu
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.679-682,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment
Y. Nagahisa ; Y. Tsuchiya ; E. Tokumitsu
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.949-952,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode
S. Hino ; H. Hatta ; K. Sadamatsu ; Y. Nagahisa ; S. Yamamoto ; T. Iwamatsu ; Y. Yamamoto ; M. Imaizumi ; S. Nakata ; S. Yamakawa
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.477-482,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897