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17 results

Conference Proceedings

1. Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

B. Krishnan ; H. Das ; H.D. Lin ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.149-152, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

H.D. Lin ; G. Melnychuk ; J.L. Wyatt ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.133-136, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

G. Melnychuk ; S.P. Kotamraju ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.205-208, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

4. Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires

R.V.K.G. Thirumalai ; B. Krishnan ; A. Davydov ; J.N. Merrett ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.209-212, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

5. Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers

S.G. Sunkari ; H. Das ; C. Hoff ; Y. Koshka ; J.R.B. Casady

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.423-426, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

6. Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method

H. Das ; B. Krishnan ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.163-166, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

7. Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC

K. Chindanon ; H.D. Lin ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.159-162, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC

B. Krishnan ; S.P. Kotamraju ; G. Melnychuk ; N. Merrett ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.581-584, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

9. Low-Temperature Homoepitaxial Growth with SiCI₄ Precursor Compared to HCl Assisted SiH₄-Based Growth

S.P. Kotamraju ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.97-100, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

10.

Conference Proceedings

10. Dislocations and Triangular Defect in Low-Temperature Halo-Carbon Epitaxial Growth and Selective Epitaxial Growth

H. Das ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.121-124, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

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Author: Y. Koshka