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17 results

Conference Proceedings

1. 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method

B. Krishnan ; J.N. Merrett ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.925-928, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

2. High-Frequency Electron Paramagnetic Resonance Study of the As-Deposited and Annealed Carbon-Rich Hydrogenated Amorphous Silicon-Carbon Films

A. V. Vasin ; E. N. Kalabukhova ; S. N. Lukin ; D. V. Savchenko ; V. S. Lysenko ; A. N. Nazarov ; A. V. Rusavsky ; Y. Koshka

Pub. info.:	Silicon Carbide 2008--materials, processing and devices : symposium held March 25-27, 2008, San Francisco, California, U.S.A.. 1069 pp.175-180, 2008. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1069

Conference Proceedings

3. Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC

S.P. Kotamraju ; B. Krishnan ; G. Melnychuk ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.111-114, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

4. Epitaxial Growth of 4H-SiC with High Growth Rate Using CH₃Cl and SiCl₄ Chlorinated Growth Precursors

S.P. Kotamraju ; B. Krishnan ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.103-106, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

5. SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition

B. Krishnan ; S.P. Kotamraju ; S.G. Sundaresan ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.187-192, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

6. Properties of Different Room-Temperature Photoluminescence Bands in 4H-SiC Substrates Investigated by Mapping Techniques

B. Krishnan ; S.K. Chanda ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.411-414, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

7. Vapor-Phase Catalyst Delivery Method for Growing SiC Nanowires

R.V.K.G. Thirumalai ; B. Krishnan ; A. Davydov ; J.N. Merrett ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.209-212, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

8. Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

G. Melnychuk ; S.P. Kotamraju ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.205-208, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

9. Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive

H.D. Lin ; G. Melnychuk ; J.L. Wyatt ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.133-136, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

10.

Conference Proceedings

10. Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

B. Krishnan ; H. Das ; H.D. Lin ; Y. Koshka

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. 556-557 pp.149-152, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

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Author: Y. Koshka