1.

Conference Proceedings
Conference Proceedings
1. I-VM C-V AND HALL EFFECT STUDIES OF INDIUM-DOPED LPE GaAs
Chen, J. F. ; Xie, K. ; Wie, C. R.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.209-214,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. INTERFACE RECOMBINATION AND THRESHOLD CURRENT IN GRINSCH-QW AlGaAs/GaAs LASER DIODES
Xie, K. ; Kim, H. M. ; Wie, C. R. ; Varriano, J. A. ; Wicks, G. W.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.591-596,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. CHARACTERIZATION OF MBE GaAs LAYERS GROWN AT 200°C-300°C
Wie, C. R. ; Xie, K. ; Berdin, T. T. ; Fronko, J. G. ; Look, D. C. ; Evans, K. R. ; Stutz, C. E.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.383-388,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
4.

Conference Proceedings
Conference Proceedings
4. InP LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURE
Xie, K. ; Wie, C.R. ; Wicks, G.W.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.265-270,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
5.

Conference Proceedings
Conference Proceedings
5. X-RAY AND RAMAN STUDIES OF MeV ION IMPLANTED GaInAs/GaAs
Wie, C. R. ; Xie, K. ; Burns, G. ; Dacol, F. H. ; Pettit, D. ; Woodall, J. M.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.499-504,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
6.

Conference Proceedings
Conference Proceedings
6. Thermal Behavior of Ni Ohmic Contacts to n-SiC: A Materials and Electrical Reliability Investigation
Cole, M.W. ; Hubbard, C. ; Demaree, D. ; Fountzzoulas, C.G. ; Natarajan, A. ; Miller, R.A. ; Harris, D. ; Xie, K. ; Searson, P.
Pub. info.: Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors.  pp.392-399,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-2
7.

Conference Proceedings
Conference Proceedings
7. Limitation of metal particle size to carbon chain growth in Fischer-Tropsch synthesis
Yang, Y. ; Xie, K. ; Li, X.
Pub. info.: Dynamics of surfaces and reaction kinetics in heterogeneous catalysis : proceedings of the international symposium, Antwerp, Belgium, September 15-17, 1997.  pp.523-,  1997.  Amsterdam.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 109
8.

Conference Proceedings
Conference Proceedings
8. TRANSPORT MODELING AND COMPENSATION MECHANISM FOR SEMI-INSULATING LT-GaAs AND InP:Cu
Xie, K. ; Wie, C.R.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.33-38,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
9.

Conference Proceedings
Conference Proceedings
9. Dry Etching of SiC for Advanced Device Applications
Flemish, J. R. ; Xie, K. ; McLane, G. F.
Pub. info.: Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.153-,  1996.  Pittsburgh, Penn.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 421
10.

Conference Proceedings
Conference Proceedings
10. High-Temperature Switching Characteristics of 6H-SiC Thyristor
Xie, K. ; Flemish, J. R. ; Burke, T. ; Buchwald, W. R. ; Zhao, J. H.
Pub. info.: III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A..  pp.93-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 423