1.

Conference Proceedings
Conference Proceedings
1. UNDOPED GaAs WITH A LOW ELECTRON CONCENTRATION GROWN ON Si BY MOCVD
Nozaki, Shinji ; Wu, A. T. ; Murray, J. J. ; George, T. ; Umeno, M.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.213-218,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
2.

Conference Proceedings
Conference Proceedings
2. THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION IN MOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS
George, T. ; Weber, E. R. ; Nozaki, S. ; Wu, A. T. ; Umeno, M.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.207-212,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
3.

Conference Proceedings
Conference Proceedings
3. NUCLEATION STUDIES OF LATTICE MATCHED AND MI-MATCHED HETEROEPITAXIAL LAYERS USING THE GaAs/A1Ga1-XP/Si SYSTEM
George, Thomas ; Weber, Eike R. ; Wu, A. T. ; Nozaki, S. ; Noto, N. ; Umeno, M.
Pub. info.: Chemistry and defects in semiconductor heterostructures.  pp.253-260,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 148
4.

Conference Proceedings
Conference Proceedings
4. Simulation of 3D films deposited by glancing angle deposition using 3D-films
Smy, T. ; Vick, D. ; Brett, M. J. ; Dew, S. K. ; Wu, A. T. ; Sit, J. C. ; Harris, K. D.
Pub. info.: New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A..  pp.141-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 616