1.

Conference Proceedings
Conference Proceedings
1. Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing
Vassilevski, K.V. ; Nikitina, I.P. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Malhan, R.K. ; Yamamoto, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.871-874,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
Mattausch, A ; Bockstedte, M. ; Pankratov, O. ; Steeds, J.W. ; Furkert, S.A. ; Hayes, J.M. ; Sullivan, W. ; Wright, N.G.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.465-468,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Optimisation of 4H-SiC MOSFET Structures for Logic Applications
Horsfall, A.B. ; Prentice, C.H.A. ; Tappin, P. ; Bhatnagar, P. ; Wright, N.G. ; Vassilevslki, K.V. ; Nikitina, I.P.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1325-1328,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET
Bhatnagar, P. ; Horsfall, A.B. ; Wright, N.G. ; Johnson, C.M. ; Vassilevski, K.V. ; O'Neill, A.G.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1195-1198,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
5.

Conference Proceedings
Conference Proceedings
5. Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
Vassilevski, K.V. ; Nikitina, I.P. ; Bhatnagar, P. ; Horsfall, A.B. ; Wright, N.G. ; O'Neill, A.G. ; Uren, M.J. ; Hilton, K. ; Munday, A. ; Hydes, A. ; Johnson C.M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.931-934,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
6.

Conference Proceedings
Conference Proceedings
6. 4H-SiC Schottky Diodes with High On/Off Current Ratio
Vassilevski, K.V. ; Horsfall, A.B. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1145-1148,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes
Horsfall, A.B. ; Vassilevski, K.V. ; Johnson, C.M. ; Wright, N.G. ; O'Neill, A.G. ; Gwilliam, R.M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1149-1152,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Enhanced Dopant Diffusion Effects in 4H Silicon Carbide
Phelps, G.J. ; Wright, N.G. ; Chester, E.G. ; Johnson, C.M. ; O'Neill, A.G. ; Ortolland, S. ; Horsfall, A.B. ; Vassilevski, K. ; Gwilliam, R.M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.855-858,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. Double Implanted Power MESFET Technology in 4H-SiC
Horsfall, A.B. ; Ortolland, S. ; Wright, N.G. ; Johnson, C.M. ; Knights, A.P.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.707-710,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
10.

Conference Proceedings
Conference Proceedings
10. Hinge Sensitivity in a Micro-Rotating Structure for Predicting Induced Thermo Mechanical Stress in Integrated Circuit Metal Interconnects
Dos Santos, J.M.M. ; Wang, K. ; Soare, S.M. ; Bull, S.J. ; Horsfall, A.B. ; Wright, N.G. ; O'Neill, A.G. ; Terry, J.G. ; Walton, A.J. ; Gundlach, A.M. ; Stevenson, J.T.M.
Pub. info.: Thin films : stresses and mechanical properties X : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.467-472,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 795