1.

Conference Proceedings
Conference Proceedings
1. DYNAMIC ANNEALING PHENOMENA AND THE ORIGIN OF RTA-INDUCED “HAIRPIN" DISLOCATIONS
Maszara, W. ; Sadana, D. K. ; Rozgonyi, G. A. ; Sands, T. ; Washburn, J. ; Wortman, J. J.
Pub. info.: Energy beam-solid interactions and transient thermal processing/1984 : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A..  pp.277-286,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 35
2.

Conference Proceedings
Conference Proceedings
2. ELECTRICAL AND STRUCTURAL CHARACTERIXATION OF POLYSILICON DEPOSITED IN A RAPID THERMAL PROCESSOR
Xen, R. ; OztOrk, k, M. C. ; Wortman, J. J. ; Batchelor, D. ; Maher, D. ; Blat, C. ; Niccolian, E.
Pub. info.: Polysilicon thin films and interfaces.  pp.29-34,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 182
3.

Conference Proceedings
Conference Proceedings
3. Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties
Li, V. Z-Q ; Mirabedini, M. R. ; Kuehn, R. T. ; Gladden, D. ; Batchelor, D. ; Christenson, K. ; Wortman, J. J. ; Ozturk, M. C. ; Maher, D. M.
Pub. info.: Polycrystalline thin films II : structure, properties, and applications : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.333-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 403
4.

Conference Proceedings
Conference Proceedings
4. Comparison of Valence-Band Tunneling in Pure SiO2, Composite SiO2/Ta2O5, and Pure Ta2O5, in MOSFETs With 1.0 nm-Thick SiO2-Equivalent Gate Dielectrics
Shanware, A. ; Massoud, H. Z. ; Vogel, E. ; Henson, K. ; Hauser, J. R. ; Wortman, J. J.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.515-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
5.

Conference Proceedings
Conference Proceedings
5. High Quality RTCVD Sidewall Spacer Dielectrics
Miles, D. S. ; Mirabedini, M. R. ; Venables, D. ; Wortman, J. J. ; Maher, D. M.
Pub. info.: Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.277-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 387
6.

Conference Proceedings
Conference Proceedings
6. CONTROL OF Si-SiO2 INTERFACE PROPERTIES IN MOS DEVICES PREPARED BY PLASMA-ASSISTED AND RAPID THERMAL PROCESSES
Lucovsky, G. ; Yasuda, T. ; Ma, Y. ; Hattangady, S. V. ; Xu, X-L. ; Misra, V. ; Hornung, B. ; Wortman, J. J.
Pub. info.: Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.81-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 318
7.

Conference Proceedings
Conference Proceedings
7. Evaluation of 2.0nm Grown and Deposited Dielectrics in 0.1ｦﾌm PMOSFETs
Srivastava, A. ; Heinisch, H. H. ; Vogel, E. ; Parker, C. ; Osburn, C. M. ; Masnari, N. A. ; Wortman, J. J. ; Hauser, J. R.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.163-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
8.

Conference Proceedings
Conference Proceedings
8. Evaluation and Comparison of 3.0nm Gate-Stack Dielectrics for Tenth-Micron Technology NMOSFETs
Yee, K. F. ; Osburn, C. M. ; Masnari, N. A. ; Hauser, J. R. ; Parker, C. G. ; Lucovsky, G. ; Henson, W. K. ; Wortman, J. J. ; Kippenberg, T. ; Kuerschner, S.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.157-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
9.

Conference Proceedings
Conference Proceedings
9. A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture
Mirabedini, M. R. ; Li, V. Z-Q. ; Acker, A. R. ; Kuehn, R. T. ; Venables, D. ; Ozturk, M. C. ; Wortman, J. J.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.207-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
10.

Conference Proceedings
Conference Proceedings
10. GATE QUALITY OXIDES PREPARED BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION
Kuehn, R. T. ; Xu, X. ; Holcombe, D. J. ; Misra, V. ; Wortman, J. J. ; Hauser, J. R. ; Wang, Q. -F. ; Maher, D. M.
Pub. info.: Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.531-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 334