Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon

Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon

Author(s):

Publication title:

Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

96-4

Pub. Year:

1996

Page(from):

27

Page(to):

36

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566771542 [1566771544]

Language:

English

Call no.:

E23400/961823

Type:

Conference Proceedings

Details

TDL ID:	ZA00013837
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Process Physics and Modeling in Semiconductor Technology ; Spring Meeting of the Electrochemical Society
Conf. info. (Number):	4th ; 1996
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	1996.05.05-1996.05.10

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