1.

Conference Proceedings
Conference Proceedings
1. 76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er
Abernathy,C.R. ; Overberg,M.J. ; Mackenzie,J.D. ; Hommerich,U. ; Pearton,S.J. ; Wilson,R.G. ; Zavada,J.M.
Pub. info.: Rare-earth-doped materials and devices IV : 26-27 January 2000, San Jose, California.  pp.76-86,  2000.  Bellingham, Washington.  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3942
2.

Conference Proceedings
Conference Proceedings
2. Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy
Shin,M. ; Polyakov,A.Y. ; Skowronski,M. ; Rohrer,G.S. ; Wilson,R.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1251-1254,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Hydrogen Implantation in III-V Compound Semiconductors and its Redistribution with Annealing
Zavada,J.M. ; Wilson,R.G.
Pub. info.: Hydrogen in compound semiconductors.  pp.189-218,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 148-149
4.

Conference Proceedings
Conference Proceedings
4. Hydrogen passivation of shallow and deep centers in GaSb
Polyakov,A.Y. ; Pearton,S.J. ; Wilson,R.G. ; Rai-Choudhury,P. ; Hillard,R.J. ; Bao,X.J. ; Stam,M. ; Milnes,A.G. ; Schlesinger,T.E.
Pub. info.: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.623-628,  1992.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 83-87