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47 results

Conference Proceedings

1. HYDROGEN INCORPORATION AND CARRIER REDUCTION IN HYDROGENATED n-GaAs:Si AND p-GaAs:Zn CRYSTALS

Zavada, J. M. ; Wilson, R. G. ; Jenkinson, H. A.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.661-666, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

2. ION IMPLANTATION IN LiNBO3

Wilson, R. G. ; Jamba, D. M. ; Betts, D. A.

Pub. info.:	Defect properties and processing of high-technology nonmetallic materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.. pp.181-186, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	24

Conference Proceedings

3. THE EFFECT OF HYDROGEN TREATMENT ON ELECTRICAL PROPERTIES OF A1GaAsSb

Polyakov, A. Y. ; Stam, M. ; Milnes, A. G. ; Wilson, R. G. ; Bochkarev, A. E. ; Raichoudhyry, P. ; Hillard, R. J. ; Pearton, S. J,.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.425-430, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

4. *ION IMPLANTATION AND CHARACTERIZATION BY III-V MATERIALS

Wilson, R. G. ; Rensch, D. B.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.343-354, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

5. REDISTRIBUTION OF IMPLANTED HYDROGEN IN p+ GaAs (Zn) AND n+ GaAs(Si) CRYSTALS

Zavada, J. M. ; Wilson, R. G. ; Novak, S. W. ; Von Neida, A. R. ; Pearton, S. J.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.331-336, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

6. HIGH RESISTIVITY GaSb AND GaAs PRODUCED BY MBE GROWTH AT ELEVATED TEMPERATURES

Polyakov, A. Y. ; Milnes, A. G. ; Stam, M, ; Wilson, R. G. ; Fang, Z. Q. ; Raichoudhury, P. ; Hillard, R. J.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.157-162, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

7. As-IMPLANTED AND ANNEALING BEHAVIOR OF H AND Be IMPLANTS IN InP AND COMPARISON WITH GaAs

Zavada, J. M. ; Wilson, R. G. ; Novak, S. W.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.881-886, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

8. Hydrogen in GaN Experiments

Pearton, S. J. ; Lee, J. W. ; Wilson, R. G. ; Zavada, J. M. ; Weinstein, M. G. ; Song, C. Y. ; Stavola, M.

Pub. info.:	Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.229-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	513

Conference Proceedings

9. Photoluminescence enhancement and morphological properties of carbon co-doped GaN: Er

Overberg. M. E. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Zavada, J. M.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.62.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

10.

Conference Proceedings

10. Comparison of implant isolation species for GaN field-effect transistor structure

Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.68.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

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Author: Wilson, R. G.