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47 results

Conference Proceedings

1. Temperature Dependent Performance of GaN Schottky Diode Rectifiers

Cao, X. A. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Pearton, S. J. ; Lee, C. -M. ; Chuo, C. -C. ; Chyi, J. -I. ; Chi, G. C. ; Han, J. ; Chu, S. N. G. ; Wilson, R. G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1631-1634, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

2. ION IMPLANTATION IN LiNBO3

Wilson, R. G. ; Jamba, D. M. ; Betts, D. A.

Pub. info.:	Defect properties and processing of high-technology nonmetallic materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.. pp.181-186, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	24

Conference Proceedings

3. THE EFFECT OF HYDROGEN TREATMENT ON ELECTRICAL PROPERTIES OF A1GaAsSb

Polyakov, A. Y. ; Stam, M. ; Milnes, A. G. ; Wilson, R. G. ; Bochkarev, A. E. ; Raichoudhyry, P. ; Hillard, R. J. ; Pearton, S. J,.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.425-430, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

4. REDISTRIBUTION OF IMPLANTED HYDROGEN IN p+ GaAs (Zn) AND n+ GaAs(Si) CRYSTALS

Zavada, J. M. ; Wilson, R. G. ; Novak, S. W. ; Von Neida, A. R. ; Pearton, S. J.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.331-336, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

5. HIGH RESISTIVITY GaSb AND GaAs PRODUCED BY MBE GROWTH AT ELEVATED TEMPERATURES

Polyakov, A. Y. ; Milnes, A. G. ; Stam, M, ; Wilson, R. G. ; Fang, Z. Q. ; Raichoudhury, P. ; Hillard, R. J.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.157-162, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

6. Quantitation of secondary ion mass spectrometry (SIMS) for HgCdTe

Lapides, L. E. ; Whiteman, G. L. ; Wilson, R. G.

Pub. info.:	Thin films and interfaces II : symposium held November 1983, in Boston, Massachusetts, U.S.A.. pp.657-662, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	25

Conference Proceedings

7. *ION IMPLANTATION AND CHARACTERIZATION BY III-V MATERIALS

Wilson, R. G. ; Rensch, D. B.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.343-354, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

8. As-IMPLANTED AND ANNEALING BEHAVIOR OF H AND Be IMPLANTS IN InP AND COMPARISON WITH GaAs

Zavada, J. M. ; Wilson, R. G. ; Novak, S. W.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.881-886, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

9. HYDROGEN INCORPORATION AND CARRIER REDUCTION IN HYDROGENATED n-GaAs:Si AND p-GaAs:Zn CRYSTALS

Zavada, J. M. ; Wilson, R. G. ; Jenkinson, H. A.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.661-666, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

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Conference Proceedings

10. Processing and device performance of GaN power rectifiers

Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.67.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

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