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17 results

Conference Proceedings

1. I-VM C-V AND HALL EFFECT STUDIES OF INDIUM-DOPED LPE GaAs

Chen, J. F. ; Xie, K. ; Wie, C. R.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.209-214, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

2. PHONON SHIFTS AND STRAINS IN STRAINED-LAYER (Ga1-XInX)As

Burns, Gerald ; Wie, C. R. ; Dacol, F. H. ; Pettit, G. D. ; Woodall, J. M.

Pub. info.:	Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.. pp.553-558, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	102

Conference Proceedings

3. ROCKING-CURVE PEAK SHIFT IN THIN HETEROJUCTION SINGLE LAYERS

Wie, C. R. ; Choi, Y. W. ; Kim,. H. M ; Chen, J. F. ; Vreeland Jr., T. ; Tsai, C.-J

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.487-492, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

4. X-RAY INTERFERENCE MEASUREMENTS OF ULTRATHIN SEMICONDUCTOR LAYERS

Wie, C. R.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.467-474, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

5. X-RAY AND RAMAN STUDIES OF MeV ION IMPLANTED GaInAs/GaAs

Wie, C. R. ; Xie, K. ; Burns, G. ; Dacol, F. H. ; Pettit, D. ; Woodall, J. M.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.499-504, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

6. STRAIN/DAMAGE IN CRYSTALLINE MATERIALS BOMBARDED BY MeV IONS: RECRYSTALLIZATION OF GaAs BY HIGH-DOSE IRRADIATION

Wie, C. R. ; Vreeland, Jr., T. ; Tombrello, T. A.

Pub. info.:	Energy beam-solid interactions and transient thermal processing/1984 : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.. pp.305-314, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	35

Conference Proceedings

7. ELECTRICAL CONTACT AND ADHESION MODIFICATION PRODUCED BY HIGH ENERGY-HEAVY ION BOMBARDMENT OF Au FILMS ON GaAs

Livi, R. P. ; Paine, S. ; Wie, C. R. ; Mendenhall, M. H. ; Tang, J. Y. ; Vreeland Jr., T. ; Tombrello, T. A.

Pub. info.:	Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.. pp.467-472, 1985. Pittsburgh. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	37

Conference Proceedings

8. ANNEALING EFFECTS IN ION BOMBARDED GaAs: RAMAN MEASUREMENTS

Burns, Gerald ; Dacol, F. H. ; baglin, J. E. E. ; Wie, C. R. ; Burstein, E. ; Cardona, M.

Pub. info.:	Characterization of defects in materials : symposium held December 1-2, 1986, Boston, Massachusetts, U.S.A.. pp.121-126, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	82

Conference Proceedings

9. ENERGY AND DEPTH DISTRIBUTIONS OF INTERFACE STATES AND BULK TRAPS AND THEIR ELECTRONIC EFFECTS IN GaInAs/GaAs HETEROJUNCTIONS

Huang, Z. C. ; Wie, C. R. ; Johnstone, D. ; Stutz, C. E.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.633-642, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

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Conference Proceedings

10. SIMULATION DESIGN AND DEVICE CHARACTERISTICS OF AlAs/GaAs/AlAs RESONANT TUNNELING STRUCTURES WITH A GaInAs EMITTER SPACER LAYER

Choi, Y. W. ; Kim, H. M. ; Wie, C. R.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.627-632, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

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Author: Wie, C. R.