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24 results

Conference Proceedings

1. High-Resolution X-ray Diffraction and X-ray Topography Study of GaN on Al2O3

Chaudhuri, J. ; Ng, M. Hooe ; Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.315-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

2. Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena

Edwards, N. V. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Kern, R. S. ; Liu, H. ; Stall, R. A. ; Wickenden, A. E. ; Doverspike, K. ; Gaskill, D. K. ; Freitas, J. A., Jr. ; Rossow, U. ; Davis, R. F. ; Aspnes, D. E.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.405-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

3. Current-voltage characteristics of ungated AlGaN/GaN heterostructures

Albrecht, J. D. ; Ruden, P. P. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.489-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

4. Correlation of drain current pulsed response with microwave power output in AlGaN/GaN HEMTs

Binari, S. C. ; Ikossi-Anastasiou, K. ; Kruppa, W. ; Dietrich, H. B. ; Kelner, G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.541-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

5. A Kinetic Model for GaN Growth

Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; DeSisto, W. J. ; Gorman, R. J.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.167-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. Magnetic Resonance Studies of High-Resistivity GaN Films Grown on Al2O3

Glaser, E. R. ; Kennedy, T. A. ; Wickenden, A. E. ; Koleske, D. D. ; Freitas, J. A., Jr.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.543-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

7. Persistent Photoconductivity in n-Type GaN

Wickenden, A. E. ; Beadie, G. ; Koleske, D. D. ; Rabinovich, W. S. ; Freitas, J. A., Jr.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.531-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

8. GaN decomposition in ammonia

Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W3.64.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

9. Enhanced GaN Decomposition at MOVPE Pressures

Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; Twigg, M. E. ; Culbertson, J. C. ; Gorman, R. J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.70.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

10.

Conference Proceedings

10. Extrinsic Performance Limitations of AlGaN/GaN Heterostructre Field Effect Transistors

Ruden, P. P. ; Albrecht, J. D. ; Sutandi, A. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.35.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

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