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Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power UMOSFET Structures

Author(s):
Agarwal, A. K.
Siergiej, R. R.
Seshadri, S.
White, M. H.
McMullin, P. G.
Burk, A. A.
Rowland, L. B.
Brandt, C. D.
Hopkins, R. H.
4 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
87
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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