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13 results

Conference Proceedings

1. IN-SITU OBSERVATION OF CHEMICAL VAPOR DEPOSITION OF THIN SiGe FILMS BY OPTICAL REFLECTION INTERFEROMETRY

Ritter, G. ; Tillack, B. ; Weidner, M. ; Bobel, F. G. ; Hertel, B.

Pub. info.:	Applications of synchrotron radiation techniques to materials science II : symposium held November 27-December 2, 1994, Boston, Massachusetts, USA. pp.51-, 1995. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	375

Conference Proceedings

2. Temperature Dependence of Nitrogen Accumulation at SiO2/Si by N2O- and by NO-Oxidation

Weidner, G. ; Kruger, D. ; Weidner, M. ; Tittelbach-Helmrich, K.

Pub. info.:	Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A.. pp.265-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	387

Conference Proceedings

3. Beryllium-Related Defect Centers in 4H-SiC

Krieger, M. ; Laube, M. ; Weidner, M. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.467-470, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Generation and Annihilation of Intrinsic-Related Defect Centers in 4H/6H-SiC

Frank, T. ; Weidner, M. ; Itoh, H. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.439-442, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

5. Physics of SiC Processing

Pensl, G. ; Afanas'ev, V. V. ; Bassler, M. ; Frank, T. ; Laube, M. ; Weidner, M.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.831-836, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method

Schulze, N. ; Barrett, D. ; Weidner, M. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.111-114, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

7. Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Kawasuso, A. ; Weidner, M. ; Redmann, F. ; Frank, T. ; Krause-Rehberg, R. ; Pensl, G. ; Sperr, P. ; Triftshauser, W. ; Itoh, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.489-492, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study

Kawasuso, A. ; Redmann, F. ; Krause-Rehberg, R. ; Sperr, P. ; Frank, T. ; Weidner, M. ; Pensl, G. ; Itoh, H.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.537-542, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

9. Negative-U-Centers in 4H- and 6H-SiC Detected by Spectral Light Excitation

Weidner, M. ; Pensl, G. ; Nagasawa, H. ; Schoner, A. ; Ohshima, T.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.485-488, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Optical Transitions in Strained Si1-yCy and S1-x-yGexCy Layers

Osten, H. J. ; Kissinger, W. ; Weidner, M. ; Eichler, M.

Pub. info.:	Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.. pp.199-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	379

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