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14 results

Conference Proceedings

1. Pressure dependent two-dimensional electron transport in defect doped InGaAs/InP heterostructures

Wasik,D. ; Dmowski,L. ; Mikucki,J. ; Lusakowski,J. ; Hsu,L. ; Walukiewicz,W. ; Bi,W.G. ; Tu,C.W.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.813-818, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

2. Effect of nitrogen on the band structure of III-N-V alloys

Shan,W. ; Walukiewicz,W. ; Yu,K.M. ; III,J.W.Ager ; Haller,E.E. ; Geisz,J.F. ; Friedman,D.J. ; Olson,J.M. ; Kurtz,S.R. ; Xin,H.P. ; Tu,C.W.

Pub. info.:	Physics and simulation of optoelectronic devices VIII : 24-28 January 2000, San Jose, USA. Part1 pp.69-79, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3944

Conference Proceedings

3. Electrical activity and diffusion of shallow acceptors in III-V semiconductors

Walukiewicz,W. ; Yu,K.M. ; Chan,L.Y. ; Jaklevic,J. ; Haller,E.E.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.941-946, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface

Shan,W. ; Li,M.F. ; Yu,P.Y. ; Walukiewicz,W. ; Hansen,W.L.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part3 pp.1427-1432, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

5. Ionized impurity scattering in isotopically engineered,compensated Ge:Ga,As

Itoh,K.M. ; Kinoshita,T. ; Walukiewicz,W. ; Beeman,J.W. ; Haller,E.E. ; Muto,J. ; Farmer,J.W. ; Ozhogin,V.I.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.77-82, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

6. Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures

Walukiewicz,W. ; Hsu,L. ; Haller,E.E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1449-1452, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Resonant interaction between local vibrational modes and extended lattice phonons in AlSb

McCluskey,M.D. ; Haller,E.E. ; Walukiewicz,W. ; Becla,P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1247-1252, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. Defect formation and electronic transport at AlGaN/GaN interfaces

Hsu,L. ; Walukiewicz,W. ; Haller,E.E.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1749-1754, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. Diffusion,Interface Mixing and Schottky Barrier Formation

Walukiewicz,W.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.519-530, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

10.

Conference Proceedings

10. Carrier Localization in Gallium Nitride

Wetzel,C. ; Walukiewicz,W. ; Haller,E.E. ; Ager,J.W.III ; Chen,A. ; Fischer,S. ; Yu,P.Y. ; Jeanloz,R. ; Grzegory,I. ; Porowski,S. ; Suski,T. ; Amano,H. ; Akasaki,I.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.31-36, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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