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35 results

Conference Proceedings

1. ANNEALING CHARACTERISTICS OF LOW TEMPERATURE GROWN GaAs:Be

Bliss, D.E. ; Walukiewicz, W. ; Chan, K.T. ; Ager, III., J.W. ; Tanigawa, S. ; Haller, E.E.

Pub. info.:	Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.. pp.93-100, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	241

Conference Proceedings

2. THE EFFECT OF Co-IMPLANTATION ON THE ELECTRICAL ACTIVITY OF IMPLANTED CARBON IN GaAs

Moll, A. J. ; Walukiewicz, W. ; Yu, K. M. ; Hansen, W. L. ; Haller, E. E.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.811-816, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. Highly Mismatched Alloys for Intermediate Band Solar Cells

Walukiewicz, W. ; Yu, K. M. ; Wu, J. ; Ager III, J. W. ; Shan, W. ; Scrapulla, M. A. ; Dubon, O. D. ; Becla, P.

Pub. info.:	Thin-film compound semiconductor photovoltaics : symposium held March 29-April 1, 2005, San Francisco, California, U.S.A.. pp.125-130, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	865

Conference Proceedings

4. Nitrogen-Induced Modification of the Electronic Band Structures in Group III-N-V Alloys

Walukiewicz, W. ; Shan, W. ; Ager III, J.W. ; Chamberlin, D.R. ; Haller, E.E. ; Geisz, J.F. ; Friedman, D.J. ; Olson, J.M. ; Kurtz, S.R.

Pub. info.:	Photovoltaics for the 21st century : proceedings of the international symposium. pp.190-200, 1999. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-11

Conference Proceedings

5. Next-Generation Thin Films for Photovoltaics: InGaAsN

Jones, E.D. ; Allerman, A.A. ; Friedman, D.J. ; Geisz, J.F. ; Klem, J.F. ; Kurtz, S.R. ; Modine, N.R. ; Shan, W. ; Tu, C. ; Walukiewicz, W.

Pub. info.:	Photovoltaics for the 21st century : proceedings of the international symposium. pp.252-267, 1999. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-11

Conference Proceedings

6. Electron scattering mechanisms at polar GaN/AlGaN interfaces(Invited Paper)

Hsu, L. ; Walukiewicz, W.

Pub. info.:	Ultrafast phenomena in semiconductors VI : 21, 24-25 January, 2002, San Jose, USA. pp.148-162, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4643

Conference Proceedings

7. FERMI LEVEL STABILIZATION IN SEMICONDUCTORS: IMPLICATIONS FOR IMPLANT ACTIVATION EFFICIENCY

Walukiewicz, W.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.483-486, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

8. ABSOLUTE PRESSURE DEPENDENCE OF THE SECOND IONIZATIN LEVEL OF EL2 IN GaAs

Bliss, D.E. ; Walukiewicz, W. ; Nolte, D.D. ; Haller, E.E.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.815-820, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

9. ABSOLUTE PRESSURE DERIVATIVES OF DEEP LEVEL DEFECTS IN III-V SEMICONDUCTORS

Nolte, D. D. ; Walukiewicz, W. ; Haller, E. E.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.423-428, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

10.

Conference Proceedings

10. SCATTERING OF FREE CARRIERS BY OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON

Nauka, K. ; Walukiewicz, W. ; Lagowski, J. ; Gatos, H. C.

Pub. info.:	Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.. pp.291-296, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	46

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