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19 results

Conference Proceedings

1. High-speed gated imaging for laser applications research using the Phoenix camera system

Nussmeier,M. ; Walker,D. ; Frank,J.D. ; Lane,R. ; Chatterton,T.

Pub. info.:	Thermosense XXIII : 16-19 April 2001, Orlando, USA. 4360 pp.37-47, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4360

Conference Proceedings

2. UV photodetectors based on AlxGa1-xN grown by MOCVD

Saxler,A. ; Walker,D. ; Zhang,X. ; Kung,P. ; Xu,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices : 1-2 February 1996. pp.132-139, 1996. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2685

Conference Proceedings

3. Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

Saxler,A. ; Kim,K.S. ; Walker,D. ; Kung,P. ; Zhang,X. ; Brown,G.J. ; Mitchel,W.C. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1229-1234, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

4. GaN grown using trimethylgallium and triethylgallium

Saxler,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Solomon,J. ; Mitchel,W.C. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1081-1086, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

5. GaN doped with sulphur

Saxier,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Soiomon,J. ; Ahoujja,M. ; Mitchel,W.C. ; Vydyanath,H.R. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1161-1166, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

6. GaN,GaAIN,and AIN for use in UV detectors for astrophysics:an update

Kung,P. ; Saxler,A. ; Zhang,X. ; Walker,D. ; Razeghi,M. ; Ulmer,M.P.

Pub. info.:	Photodetectors : materials and devices : 1-2 February 1996. pp.126-131, 1996. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2685

Conference Proceedings

7. Solar-blind Alx Ga1-x N p-i-n photodetectors grown on LEO and non-LEO GaN

Sandvik,P.M. ; Walker,D. ; Kung,P. ; Mi,K. ; Shahedipour,F. ; Kumar,V. ; Zhang,X. ; Diaz,J. ; Jelen,C.L. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.265-272, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

8. High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates

Razeghi,M. ; Kung,P. ; Walker,D. ; Hamilton,M. ; Diaz,J.

Pub. info.:	Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland. pp.14-20, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3725

Conference Proceedings

9. Intrinsic AlxGa1-xN photodetectors for the entire compositional range

Walker,D. ; Zhang,X. ; Saxler,A. ; Kung,P. ; Xu,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.267-274, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

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Conference Proceedings

10. Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth

Kung,P. ; Walker,D. ; Sandvik,P. ; Hamilton,M. ; Diaz,J. ; Lee,I.-H. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.223-229, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

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