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19 results

Conference Proceedings

1. High-speed gated imaging for laser applications research using the Phoenix camera system

Nussmeier,M. ; Walker,D. ; Frank,J.D. ; Lane,R. ; Chatterton,T.

Pub. info.:	Thermosense XXIII : 16-19 April 2001, Orlando, USA. pp.37-47, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4360

Conference Proceedings

2. Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)

Razeghi,M. ; Zhang,X. ; Kung,P. ; Saxier,A. ; Walker,D. ; Lim,K. Y. ; Kim,K. S.

Pub. info.:	Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland. pp.2-11, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3179

Conference Proceedings

3. New Developments in III-Nitride Material and Device Applications

Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Kim,K.S. ; Vydyanath,H.R. ; Solomon,J. ; Ahoujja,M. ; Mitchel,W.C.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.277-284, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

4. Solar-blind Alx Ga1-x N p-i-n photodetectors grown on LEO and non-LEO GaN

Sandvik,P.M. ; Walker,D. ; Kung,P. ; Mi,K. ; Shahedipour,F. ; Kumar,V. ; Zhang,X. ; Diaz,J. ; Jelen,C.L. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices V : 26-28 January 2000, San Jose, California. pp.265-272, 2000. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3948

Conference Proceedings

5. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

Kung,P. ; Zhang,X. ; Walker,D. ; Saxler,A. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.214-220, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

6. High-quality LEO growth and characterization of GaN films on AI2O3 and Si substrates

Razeghi,M. ; Kung,P. ; Walker,D. ; Hamilton,M. ; Diaz,J.

Pub. info.:	Epilayers and heterostructures in optoelectronics and semiconductor technology : International Conference on Solid State Crystals '98 : 12-16 October 1998, Zakopane, Poland. pp.14-20, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3725

Conference Proceedings

7. UV photodetectors based on AlxGa1-xN grown by MOCVD

Saxler,A. ; Walker,D. ; Zhang,X. ; Kung,P. ; Xu,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices : 1-2 February 1996. pp.132-139, 1996. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2685

Conference Proceedings

8. Intrinsic AlxGa1-xN photodetectors for the entire compositional range

Walker,D. ; Zhang,X. ; Saxler,A. ; Kung,P. ; Xu,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.267-274, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

9. Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth

Razaghi,Manijeh ; Kung,P. ; Zhang,P.Sandvik X. ; Mi,K. ; Walker,D. ; Kumar,V. ; Diaz,J.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.197-203, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

10.

Conference Proceedings

10. GaN doped with sulphur

Saxier,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Soiomon,J. ; Ahoujja,M. ; Mitchel,W.C. ; Vydyanath,H.R. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1161-1166, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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Author: Walker,D.