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Conference Proceedings

1. *HIGH-QUALITY AMORPHOUS SILICON CARBIDE PREPARED BY A NEW FABRICATION METHOD FOR A WINDOW P-LAYER OF SOLAR CELLS

Ninomiya, K. ; Haku, H. ; Tarui, H. ; Nakamura, N. ; Tanaka, M. ; Wakisaka, K. ; Tsuda, S. ; Nishiwaki, H. ; Nakano, S. ; Kuwano, Y.

Pub. info.:	Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.663-674, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	242

Conference Proceedings

2. HIGH-QUALITY POLYCRYSTALLINE SILICON THIN FILM PREPARED BY A SOLID PHASE CRYSTALLIZATION METHOD

Baba, T. ; Matsuyama, T. ; Sawada, T. ; Takahama, T. ; Wakisaka, K. ; Tsuda, S.

Pub. info.:	Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A.. pp.895-, 1995. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	358

Conference Proceedings

3. High-Quality Poly-Si Films Using an Excimer Laser Annealing Method for Giant-Microelectronics Application

Kuriyama, H. ; Kuwahara, T. ; Wakisaka, K. ; Kiyama, S. ; Tsuda, S. ; Nakano, S.

Pub. info.:	Proceedings of the Second Symposium on Thin Film Transistor Technologies. pp.77-91, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-35

Conference Proceedings

4. Very Wide-Gap and Device-Quality a-Si:H From Highly H2 Diluted SiH4 Plasma Decomposed by High rf Power

Kiyama, S. ; Okamoto, S. ; Terada, N. ; Terakawa, A. ; Wakisaka, K. ; Yata, S.

Pub. info.:	Amorphous and heterogeneous silicon thin films : fundamentals to devices - 1999 : symposium held April 5-9, 1999, San Francisco, California, U.S.A.. pp.145-150, 1999. Warrendale. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	557