1.

Conference Proceedings
Conference Proceedings
1. Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD
Forsberg, U. ; Henry, A. ; Danielsson, Oe. ; Rorsman, N. ; Eriksson, J. ; Wahab, Q. ; Storasta, L. ; Linnarsson, M.K. ; Janzen, E.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
2.

Conference Proceedings
Conference Proceedings
2. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Ellison, A. ; Zhang, J. ; Magnusson, W. ; Henry, A. ; Wahab, Q. ; Bergman, J. P. ; Hemmingsson, C. ; Son, N. T. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.131-136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
3.

Conference Proceedings
Conference Proceedings
3. Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC
Zangooie, S. ; Persson, P. O. A. ; Hilfiker, J. N. ; Hultman, L. ; Arwin, H. ; Wahab, Q.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.537-540,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
4.

Conference Proceedings
Conference Proceedings
4. Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors
Jonsson, R. ; Wahab, Q. ; Rudner, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1263-1267,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
5.

Conference Proceedings
Conference Proceedings
5. Observation of a Non-Stoichiometric Layer at the Silicon Dioxide-Silicon Carbide Interface: Effect of Oxidation Temperature and Post-Oxidation Processing Conditions
Chang, K.C. ; Wahab, Q. ; Porter, L.M.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
6.

Conference Proceedings
Conference Proceedings
6. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. ; Ellison, A. ; Hallin, C. ; Henry, A. ; Persio, J. Di ; Martinez, R. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1175-1178,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Wahab, Q. ; Ellison, A. ; Zhang, J. ; Forsberg, U. ; Duranova, E. ; Henry, A. ; Madsen, L. D. ; Janzen, E.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1171-1174,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
Jonsson, R. ; Wahab, Q. ; Rudner, S.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1225-1228,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
9.

Conference Proceedings
Conference Proceedings
9. Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
Jonsson, Rolf ; Eriksson, Joakim ; Wahab, Q. ; Rudner, S. ; Rorsman, N. ; Zirath, H. ; Svensson, C.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1395-1398,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Growth of Device Quality 4H-SiC High Velocity Epitaxy
Yakimova, R. ; Syvajarvi, M. ; Ciechonski, R.R ; Wahab, Q.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.201-204,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460