1.

Conference Proceedings
Conference Proceedings
1. New Achievements on CVD Based Methods for SiC Epitaxial Growth
Crippa, D. ; Valente, G. L. ; Ruggiero, A. ; Neri, L. ; Reitano, R. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Abbagnale, G. ; Veneroni, A. ; Omarini, F. ; Zamolo, L. ; Masi, M. ; Roccaforte, F. ; Giannazzo, G. ; Franco, S. Di ; Via, F. La
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.67-72,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Estimation of the critical radius for the nucleation of the C54 phase in C49 TiSi2: Role of the difference in density
Migas, D. B. ; Iannuzzi, M. ; Miglio, Leo ; Via, F. La ; Grimaldi, M. G.
Pub. info.: Nucleation and growth processes in materials : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.129-,  2000.  Pittsburgh, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 580
3.

Conference Proceedings
Conference Proceedings
3. Kinetics of the C49-C54 Transformation in Patterned and Blanket TiSi2 Films: A Comparison
Via, F. La ; Privitera, S. ; Grimaldi, M. G. ; Raineri, V. ; Galli, M. ; Marabelli, F. ; Iannuzzi, M. ; Miglio, L.
Pub. info.: Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.219-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 514
4.

Conference Proceedings
Conference Proceedings
4. Effect of Lateral Dimension Scaling on Thermal Stability of Thin CoSi2 Layers on Polysilicon Implanted With Si
Via, F. La ; Alberti, A. ; Grimaldi, M. G. ; Ravesi, S.
Pub. info.: Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A..  pp.381-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 514
5.

Conference Proceedings
Conference Proceedings
5. Electrical Characterization of Ultra-Shallow Junctions Formed by Diffusion from a CoSi2 Diffusion Source
Via, F. La ; Rimini, E.
Pub. info.: Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A..  pp.493-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 427
6.

Conference Proceedings
Conference Proceedings
6. Ion-Irradiation Effect on the Ni/SiC Interface Reaction
Roccaforte, F. ; Calcagno, L. ; Musumeci, P. ; Via, F. La
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.255-258,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
7.

Conference Proceedings
Conference Proceedings
7. Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights
Pierobon, R. ; Meneghesso, G. ; Zanoni, E. ; Roccaforte, F. ; Via, F. La ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.933-936,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
8.

Conference Proceedings
Conference Proceedings
8. Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiC
Roccaforte, F. ; Giannazzo, F. ; Bongiorno, C. ; Libertino, S. ; Via, F. La ; Raineri, V.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.729-732,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky Diodes
Via, F. La ; Roccaforte, F. ; Franco, S. Di ; Ruggiero, A. ; Neri, L. ; Reitano, R. ; Calcagno, L. ; Foti, G. ; Mauceri, M. ; Leone, S. ; Pistone, G. ; Abbondanza, G. ; Abbagnale, G. ; Valente, G. L. ; Crippa, D.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.429-432,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
Ruggiero, A. ; Zimbone, M. ; Roccaforte, F. ; Libertino, S. ; Via, F. La ; Reitano, R. ; Calcagno, L.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.485-488,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485