1.

Conference Proceedings
Conference Proceedings
1. VACANCY-TYPE DEFECTS IN ION-IMPLANTED Si STUDIED BY SLOW POSITRON BEAM
Hautojarvi, P. ; Huttunen, P. ; Makinen, J. ; Punkka, E. ; Vehanen, A.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.105-110,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
2.

Conference Proceedings
Conference Proceedings
2. Polytype stability and defect reduction in 4H-SiC crystals grown via sublimation technique
Yakimova, R. ; Iakimov, T. ; Syvajarvi, M. ; Jacobsson, H. ; Raback, P. ; Vehanen, A. ; Janzen, E.
Pub. info.: Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.265-,  1999.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 572
3.

Conference Proceedings
Conference Proceedings
3. SiC Crystal Growth by HTCVD
Ellison, A. ; Magnusson, B. ; Sundqvist, B. ; Pozina, G. ; Bergman, J.P. ; Janzen, E. ; Vehanen, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.9-14,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460