1.

Conference Proceedings
Conference Proceedings
1. Investigation of Recombination Parameters in Ion Implanted Layer-Substrate Si Structures
Gaubas, E. ; Jarasiunas, K. ; Kaniava, A. ; Vaitkus, J.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.603-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
2.

Conference Proceedings
Conference Proceedings
2. IR and MW Absorption Techniques for Bulk and Surface Recombination Control in High-Quality
Kaniava, A. ; Menczigar, U. ; Vanhellemont, J. ; Poortmans, J. ; Rotondaro, A. L. P. ; Gaubas, E. ; Vaitkus, J. ; Koster, L. ; Graf, D.
Pub. info.: Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA.  pp.389-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 386
3.

Conference Proceedings
Conference Proceedings
3. Photodiffractive Characterization of Growth-Defects in GaAs
Jarasiunas, K. ; Sudzius, M. ; Kaniava, A. ; Vaitkus, J.
Pub. info.: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.59-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 378
4.

Conference Proceedings
Conference Proceedings
4. Bulk SiC Devices for High Radiation Environments
Cunningham, W. ; Cooke, M. ; Melone, J. ; Horn, M. ; Kazukauskas, V. ; Roy, P. ; Doherty, F. ; Glaser, M. ; Vaitkus, J. ; Rahman, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1093-1096,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460