1.

Conference Proceedings
Conference Proceedings
1. Ultravlolet photodetectors based on GaN and AlxGa1-xN epitaxial layers
Shmidt,N.M. ; Lundin,W.V. ; Sakharov,A.V. ; Usikov,A.S. ; Zavarin,E.E. ; Govorkov,A.V. ; Polyakov,A.Ya. ; Smirnov,N.B.
Pub. info.: 16th International conference on photoelectronics and night vision devices : 25-27 May 2000 Moscow, Russia.  pp.92-96,  2000.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4340
2.

Conference Proceedings
Conference Proceedings
2. Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
Lundin,W.V. ; Usikov,A.S. ; Pushnyi,B.V. ; Ushakov,U.I. ; Stepanov,M.V. ; Shmidt,N.M. ; Shubina,T.V. ; Sakharov,A.V. ; Faleev,N.N. ; Solov'ev,V.A. ; Sitnikova,A.A. ; Kudriavisev,Yu.A. ; Ber,B.Ya. ; Zadiranov,Yu.M.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1315-1318,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures:Correlation with Structural Properties
Holst,J. ; M.Straｦﾂburg ; Ledentsov,N.N. ; Eckey,L. ; Goldner,A. ; Hoffmann,A. ; Hempel,T. ; Rudloff,D. ; Bertram,F. ; Christen,J. ; Sakharov,A.V. ; Maximov,M.V. ; Usikov,A.S. ; Lundin,W.V. ; Alferov,Z.I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1291-1294,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. Some Features of a Nucleation Layer Growth Process and its Influence on the CaN Epilayer Quality
Lundin,W.V. ; Usikov,A.S. ; Pushnyi,B.V. ; Ushakov,U.I. ; Stepanov,M.V. ; Shmidt,N.M. ; Sakharov,A.V. ; Zadiranov,Yu.M. ; Suturin,S.M. ; Busov,V.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1125-1128,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Impact of radiation-induced defects on the yellow luminescence in MOCVD GaN
Emtsev,V.V. ; Davydov,V.Yu. ; Goncharuk,I.N. ; Kalinina,E.V. ; Kozlovskii,V.V. ; Poloskin,D.S. ; Sakharov,A.V. ; Shmidt,N.M. ; Smimov,A.N. ; Usikov,A.S.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1143-1148,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
6.

Conference Proceedings
Conference Proceedings
6. Electrical and Optical Properties of Highly Strained GaN Epilayers
Usikov,A.S. ; Lundin,W.V. ; Pushnyi,B.V. ; Shmidt,N.M. ; Davydov,V.Yu. ; Sakharov,A.V. ; Shubina,T.V. ; Toropov,A.A. ; Faleev,N.N. ; Shcheglov,M. ; Tsatsul'nikov,A.F.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1393-1396,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268