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12 results

Conference Proceedings

1. FTIR Absorption aud Photoluminescence Study of a New Defect System in GaP:Fe:S

Schneider,J.M. ; Thonke,K. ; Ulrici,W. ; Sauer,R.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.323-328, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Carbon-hydrogen interaction in III-V compounds

Clerjaud,B. ; Cote,D. ; Gendron,F. ; Hahn,W-S. ; Krause,M. ; Porte,C. ; Ulrici,W.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.563-568, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. Electron paramagnetic resonance identification of a trigonal Fe-S pair in GaP

Kreissl,J. ; Ulrici,W. ; Gehlhoff,W.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.719-722, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. Nitrogen-Hydrogen Complexes in GaP and GaAs

Hahn,W.-S. ; Clerjaud,B. ; Cote,D. ; Gendron,F. ; Porte,C. ; Ulrici,W. ; Wasik,D. ; Wilkening,W.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.277-282, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

5. Isotopic Effects in GaAs:Ni

Clenjaud,B. ; Cote,D. ; Gendron,F. ; Krause,M. ; Ulrici,W.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.775-778, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

6. Optical Absorption and EPR of V4+ in GaP

Ulrici,W. ; Kreissl,J. ; Hayes,D.G. ; Eaves,L. ; Friedland,K.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.875-880, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

7. Photoluminescence,optical absorption,and EPR studies of the CO2+- Sp pair defect in GaP

Goser,R. ; Kreissl,J. ; Thonke,K. ; Ulrici,W.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1069-1074, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors

Wolf,T. ; Ulrici,W. ; Cote,D. ; Clerjaud,B. ; Bimberg,D.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.317-322, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

9. Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors

Thonke,K. ; Baier,T. ; Hamann,J. ; Scheerer,O. ; Sauer,R. ; Ulrici,W.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1521-1526, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

10.

Conference Proceedings

10. Piezo-Spectroscopic Study of the V3+ photoluminescence in GaP:V:S

Steck,S. ; Rtickert,G. ; Thonke,K. ; Ulrici,W. ; Sauer,R.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.731-736, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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