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18 results

Conference Proceedings

1. Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC

Bassim, N.D. ; Twigg, M.E. ; Mastro, M.A. ; Neudeck, P.G. ; Eddy, C.R.Jr. ; Henry, R.L. ; Holm, R.N. ; Powell, J.A. ; Trunek, A.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1509-1512, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Reduction of Derects in GaN Epitaxial Films Grown Heteroepitaxially on SiC

Eddy, C.R.,Jr. ; Bassim, N.D. ; Mastro, M.A. ; Henry, R.L. ; Twigg, M.E. ; Holm, R.T. ; Culbertson, J.C. ; Neudeck, P.G. ; Powell, J.A. ; Trunek, A.J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1483-1488, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Overlapping Shockley/Frank Faults in 4F-SiC PiN Diodes

Twigg, M.E. ; Stahlbush, R.E. ; Losee, P.A. ; Li, C.H. ; Bhat, I.B. ; Chow, T.P.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.383-386, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Relaxation Mechanisms of Strained SiGe Films Bonded to High and Low Viscosity Oxides

Hobart, K.D. ; Kub, F.J. ; Fatemi, M. ; Twigg, M.E. ; Thompson, P.E. ; Kuan, T.S. ; Inoki, C.K.

Pub. info.:	Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia. pp.85-91, 1999. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-35

Conference Proceedings

5. ELIMINATION OF MICROTWINS IN MAE-GROWN SILICON ON SAPHIRE

Twigg, M.E. ; Richmond, E.D. ; Pellegrino, J.G.

Pub. info.:	Characterization of the structure and chemistry of defects in materials : symposium held November 28-December 3, 1988, Boston, Massachusetts, U.S.A.. pp.409-414, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	138

Conference Proceedings

6. Characteristics Of Oxynitrides Grown In N20

Saks, N.S. ; Ma, D.I. ; Fleetwood, D.M. ; Twigg, M.E.

Pub. info.:	Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films. pp.395-404, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-16

Conference Proceedings

7. PLASTIC FLOW IN Si/Ge QUANTUM WELL STRUCTURES

Twigg, M.E. ; Godbey, D.J.

Pub. info.:	Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.83-88, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	160

Conference Proceedings

8. RELATIVE LATTICE PARAMETER MEASUREMENT IN QUATERNARY (InGaAsP) LAYERS ON InP SUBSTRATES USING CONVERGENT BEAM ELECTRON DIFFRACTION

Twigg, M.E. ; Chu, S.N.G. ; Joy, D.C. ; Maher, D.M. ; Macrander, A.T. ; Nakahara, S. ; Chin, A.K.

Pub. info.:	Materials characterization : symposium held April 15-17, 1986, Palo Alto California, U.S.A.. pp.147-152, 1986. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	69

Conference Proceedings

9. Si-Si PN Junctions Fabricated by Wafer Bonding in UHV

Hobart, K.D. ; Desmond, C.A. ; Kub, F.J. ; Twigg, M.E. ; Jernigan, G.G.

Pub. info.:	Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications. pp.409-416, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-36

10.

Conference Proceedings

10. The Microstructure of GaN Nucleation Layers Grown by MOCVD on (1120)Sapphire Versus Pressure and Temperature

Wojtowicz, T. ; Ruterana, P. ; Twigg, M.E. ; Henry, R.L. ; Koleske, D.D. ; Wickenden, A.E.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.771-774, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

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Author: Twigg, M.E.