1.

Conference Proceedings
Conference Proceedings
1. MOSSBAUER STUDY OF THE ROLE OF ALUMINUM AND CHROMIUM IN NITROGEN IMPLANTED IRON
Kopcewicz, M. ; Jagielski, J. ; Turos, A. ; Williamson, D. L.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.509-514,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
2.

Conference Proceedings
Conference Proceedings
2. Dual role of TiN reaction barrier in gold-based metallization to GaAs
Piotrowska, A. ; Kaminska, E. ; Guziewicz, M. ; Kwiatkowski, S. ; Turos, A.
Pub. info.: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.219-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 300
3.

Conference Proceedings
Conference Proceedings
3. On the Behavior of Uranium Dioxide Toward Aqueous Corrosion: Incidence of Electronic Stopping of Fission Fragments
Choffel, C. ; Garrido, F. ; Thome, L. ; Dran, J-C. ; Nowicki, L. ; Turos, A.
Pub. info.: Scientific basis for nuclear waste management XXI : symposium held September 28-October 3, 1997, Davos, Switzerland.  pp.909-,  1998.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 506
4.

Conference Proceedings
Conference Proceedings
4. On the influence of laser beam homogenity on the regrowth of ion implanted Si
Wielunski, M. ; Auleytner, J. ; Turos, A. ; Wielunska, D.
Pub. info.: Laser and electron-beam interactions with solids : proceedings of the Materials Research Society Annual Meeting, November 1981, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A..  pp.299-303,  1982.  New York.  North Holland
Title of ser.: Materials Research Society symposia proceedings
Ser. no.: 4
5.

Conference Proceedings
Conference Proceedings
5. Doping, Activation of Impurities, and Defect Annihilation in GaN by High Pressure Annealing
Suski, T. ; Jun, J. ; Leszczynski, M. ; Teisseyre, H. ; Grzegory, I. ; Porowski, S. ; Baranowski, J. M. ; Rocket, A. ; Strite, S. ; Stonert, A. ; Turos, A. ; Tan, H. H. ; Williams, J. S. ; Jagadish, C.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.949-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482