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Conference Proceedings

1. 50 Effect of starting surface in Atomic Layer Deposition

Honkko, S. ; Tuominen, M. ; Voinonen-Ahlgren, E. ; Tois, E. ; Li, W.-M. ; Macs, J.W.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.405-458, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-14

Conference Proceedings

2. 34 Rapid thermal annealing of atomic layer deposited hafnium-silicate/poly-silicon layers

Rittersma, Z.M. ; Massoubre, D. ; Roozeboorn, F. ; Verheijen, M.A. ; van Berkum, J.G.M ; Tamminga, Y. ; Dao, F. ; Snijders, J.H.M ; Vainonen-Ahigren, E. ; Fois, F. ; Tuominen, M. ; Haukka, S.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.273-280, 2003. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-14

Conference Proceedings

3. High-k Oxides by Atomic Layer Chemical Vapour Deposition

Tuominen, M. ; Kanniainen, T. ; Haukka, S.

Pub. info.:	Rapid thermal and other short-time processing technologies : proceedings of the international symposium. pp.271-282, 2000. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-9

Conference Proceedings

4. * Ultra Thin High-K Dielectrics Grown by Atomic Layer Deposition: A Comparative Study of ZrO2, HfO2, Y2O3 and Al2O3

Gusev, E.P. ; Canter, E. ; Copel, M. ; Gribelyuk, M. ; Buchanan, D.A. ; Okorn-Schmidt, H. ; D'Emic, C. ; Kozlowski, P. ; Tuominen, M. ; Linnermo, M. ; Haukka, S.

Pub. info.:	Rapid thermal and other short-time processing technologies II : proceedings of the international symposium. pp.189-196, 2001. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-9

Conference Proceedings

5. 16 Properties of HfTaxOy High-K Layers Deposited by ALCVD

Zhao, C. ; Rittersma, Z. M. ; Van Berkum, J. G. M. ; Snijders, J. H. M. ; Hendriks, A. ; Breimer, P. ; Groat, P. ; Maes, J. W. ; Wittesr, H. ; Afanas'ev, V. V. ; Tois, E. ; Tuominen, M. ; Caymax, M. ; De Gendt, S. ; Heyns, M.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.133-140, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

Conference Proceedings

6. Synchrotron X-ray Topographic Study of Dislocations in GaAs Detector Crystals Grown by Vertical Gradient Freeze Technique

Tuomi, T. ; Juvonen, M. ; Rantamaki, R. ; Hjelt, K. ; Bavdaz, M. ; Nenonen, S. ; Gagliardi, M-A. ; McNally, P. J. ; Danilewsky, A. N. ; Prieur, E. ; Taskinen, M. ; Tuominen, M.

Pub. info.:	Semiconductors for room-temperature radiation detector applications II : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.459-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	487

Conference Proceedings

7. MAGNETIZATION OF A SUPERCONDUCTING GLASS

Tuominen, M. ; Goldman, A. M. ; Mecartney, M. L.

Pub. info.:	High-temperature superconductors : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.. pp.371-374, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	99

Conference Proceedings

8. 57 High-k Dielectric Growth on Germanium by Atomic Layer Deposition

Rahtu, A. ; Ralli, K. ; Putkonen, M. ; Tuominen, M. ; Haukka, S.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.476-484, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

Conference Proceedings

9. Atomic Layer CVD For Continuously Shrinking Devices

Haukka, S. ; Elers, K. ; Tuominen, M.

Pub. info.:	Materials, technology and reliability for advanced interconnects and low-k dielectrics : symposium held April 23-27, 2000, San Francisco, California, U.S.A.. pp.D6.4-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	612

10.

Conference Proceedings

10. Physical Characterization of Ultrathin Films of High Dielectric Constant Materials on Silicon

Gusev, E.P. ; Copel, M. ; Cartier, E. ; Buchanan, D. ; Okorn-Schmidt, H. ; Cribelyuk, M.A. ; Falcon, D. ; Murphy, R. ; Molis, S. ; Baumvol, I.J.R. ; Krug, C. ; Jussila, M. ; Tuominen, M. ; Haukka, S.

Pub. info.:	The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000. pp.477-486, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-2

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Author: Tuominen, M.