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Conference Proceedings

1. Si-Doped In0.23Ga0.77N/GaN Short-period Superlattice Tunneling Contact Layer Used on InGaN/GaN Laser Diode

Tun, C.J. ; Tu, R.C. ; Sheu, J.K. ; Chou, C.C. ; Wang, T.C. ; Tsai, C.E. ; Chi, G.C.

Pub. info.:	State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia. pp.254-259, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-06

Conference Proceedings

2. Planar GaN-Based UV Photodetectors Formed by Si Implantation

Chen, M.C. ; Sheu, J.K. ; Lee, M.L. ; Kao, C.J. ; Tun, C.J. ; Ch, G.C.

Pub. info.:	State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia. pp.522-528, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-06