1.

Conference Proceedings

Conference Proceedings
von Bardeleben, H. J. ; Cantin, J. L. ; Ganem, J. J. ; Trimaille, I. ; Gusev, E. P.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.249-263,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings

Conference Proceedings
Trimaille, I. ; Ganem, J-J. ; Gosset, L. G. ; Bailly, O. ; Rigo, S. ; Cantin, J-L. ; Bardeleben, H. J. von
Pub. info.: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.269-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 592
3.

Conference Proceedings

Conference Proceedings
Baumvol, I.J.R. ; Breelle, E. ; Stedile, F.C. ; Ganem, J.-J. ; Trimaille, I. ; Rigo, S.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.97-108,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
4.

Conference Proceedings

Conference Proceedings
Cantin, J.L. ; Schoisswohl, M. ; von Bardeleben, H.J. ; Morazzani, V. ; Ganem, J.-J. ; Trimaille, I.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.28-45,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1
5.

Conference Proceedings

Conference Proceedings
Trimaille, I. ; Stedile, F.C. ; Ghanem, J.-J. ; Baumvol, I.J.R. ; Rigo, S.
Pub. info.: The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface.  pp.59-71,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-1